TY  - JOUR
AU  - Pertsev, N. A.
AU  - Dittmann, R.
AU  - Plonka, R.
AU  - Waser, R.
TI  - Thickness dependence of intrinsic dielectric response and apparent interfacial capacitance in ferroelectric thin films
JO  - Journal of applied physics
VL  - 101
SN  - 0021-8979
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-56176
SP  - 074102
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - We studied theoretically the influence of the progressive strain relaxation and the depolarizing-field effect on the thickness dependence of the out-of-plane dielectric response of epitaxial ferroelectric thin films sandwiched between extended metal electrodes. The calculations show that the inverse of the measured capacitance varies with the film thickness almost linearly in the most part of the thickness range at the majority of temperatures. Extrapolation of this linear dependence to zero thickness usually gives considerable nonzero intercept even in the absence of nonferroelectric interfacial layers. Remarkably, such apparent "interfacial capacitance" in a certain temperature range becomes negative. The physical meaning of the effective dielectric constant, which can be extracted from the slope of the reciprocal capacitance thickness dependence, is also analyzed. The theoretical predictions are compared with the experimental data obtained for single-crystalline SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 and Pt/Ba0.7Sr0.3TiO3/SrRuO3 thin-film capacitors. (c) 2007 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000245691000064
DO  - DOI:10.1063/1.2713934
UR  - https://juser.fz-juelich.de/record/56176
ER  -