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@ARTICLE{Pertsev:56176,
author = {Pertsev, N. A. and Dittmann, R. and Plonka, R. and Waser,
R.},
title = {{T}hickness dependence of intrinsic dielectric response and
apparent interfacial capacitance in ferroelectric thin
films},
journal = {Journal of applied physics},
volume = {101},
issn = {0021-8979},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-56176},
pages = {074102},
year = {2007},
note = {Record converted from VDB: 12.11.2012},
abstract = {We studied theoretically the influence of the progressive
strain relaxation and the depolarizing-field effect on the
thickness dependence of the out-of-plane dielectric response
of epitaxial ferroelectric thin films sandwiched between
extended metal electrodes. The calculations show that the
inverse of the measured capacitance varies with the film
thickness almost linearly in the most part of the thickness
range at the majority of temperatures. Extrapolation of this
linear dependence to zero thickness usually gives
considerable nonzero intercept even in the absence of
nonferroelectric interfacial layers. Remarkably, such
apparent "interfacial capacitance" in a certain temperature
range becomes negative. The physical meaning of the
effective dielectric constant, which can be extracted from
the slope of the reciprocal capacitance thickness
dependence, is also analyzed. The theoretical predictions
are compared with the experimental data obtained for
single-crystalline SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 and
Pt/Ba0.7Sr0.3TiO3/SrRuO3 thin-film capacitors. (c) 2007
American Institute of Physics.},
keywords = {J (WoSType)},
cin = {IFF-6 / CNI / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381 /
$I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000245691000064},
doi = {10.1063/1.2713934},
url = {https://juser.fz-juelich.de/record/56176},
}