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@ARTICLE{Pertsev:56176,
      author       = {Pertsev, N. A. and Dittmann, R. and Plonka, R. and Waser,
                      R.},
      title        = {{T}hickness dependence of intrinsic dielectric response and
                      apparent interfacial capacitance in ferroelectric thin
                      films},
      journal      = {Journal of applied physics},
      volume       = {101},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-56176},
      pages        = {074102},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We studied theoretically the influence of the progressive
                      strain relaxation and the depolarizing-field effect on the
                      thickness dependence of the out-of-plane dielectric response
                      of epitaxial ferroelectric thin films sandwiched between
                      extended metal electrodes. The calculations show that the
                      inverse of the measured capacitance varies with the film
                      thickness almost linearly in the most part of the thickness
                      range at the majority of temperatures. Extrapolation of this
                      linear dependence to zero thickness usually gives
                      considerable nonzero intercept even in the absence of
                      nonferroelectric interfacial layers. Remarkably, such
                      apparent "interfacial capacitance" in a certain temperature
                      range becomes negative. The physical meaning of the
                      effective dielectric constant, which can be extracted from
                      the slope of the reciprocal capacitance thickness
                      dependence, is also analyzed. The theoretical predictions
                      are compared with the experimental data obtained for
                      single-crystalline SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 and
                      Pt/Ba0.7Sr0.3TiO3/SrRuO3 thin-film capacitors. (c) 2007
                      American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / CNI / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000245691000064},
      doi          = {10.1063/1.2713934},
      url          = {https://juser.fz-juelich.de/record/56176},
}