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001     56184
005     20200423204432.0
024 7 _ |a 10.1063/1.2655487
|2 DOI
024 7 _ |a WOS:000245317700088
|2 WOS
024 7 _ |a 2128/17179
|2 Handle
037 _ _ |a PreJuSER-56184
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Weides, M.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB59925
245 _ _ |a Low T_c Josephson junctions with tailored barrier
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2007
300 _ _ |a 063902
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Journal of Applied Physics
|x 0021-8979
|0 3051
|v 101
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Nb/Al2O3/Ni0.6Cu0.4/Nb based superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a thickness step in the metallic ferromagnetic Ni0.6Cu0.4 interlayer were fabricated. The step was defined by optical lithography and controlled etching. The step height is on the scale of a few angstroms. Experimentally determined junction parameters by current-voltage characteristics and Fraunhofer pattern indicate uniform ferromagnetic layer thicknesses and the same interface transparencies for etched and nonetched F layers. This technique could be used to tailor low-T-c Josephson junctions having controlled critical current densities at defined parts of the junction area, as needed for tunable resonators, magnetic-field driven electronics, or phase modulated devices. (c) 2007 American Institute of Physics.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK412
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Schindler, C.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB61376
700 1 _ |a Kohlstedt, H.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB3107
773 _ _ |a 10.1063/1.2655487
|g Vol. 101, p. 063902
|p 063902
|q 101<063902
|0 PERI:(DE-600)1476463-5
|t Journal of applied physics
|v 101
|y 2007
|x 0021-8979
856 7 _ |u http://dx.doi.org/10.1063/1.2655487
856 4 _ |u https://juser.fz-juelich.de/record/56184/files/1.2655487.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/56184/files/1.2655487.gif?subformat=icon
|x icon
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/56184/files/1.2655487.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/56184/files/1.2655487.jpg?subformat=icon-700
|x icon-700
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/56184/files/1.2655487.pdf?subformat=pdfa
|x pdfa
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:56184
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
914 1 _ |y 2007
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a JCR/ISI refereed
|0 StatID:(DE-HGF)0010
920 1 _ |k IFF-6
|l Elektronische Materialien
|d 31.12.2010
|g IFF
|0 I:(DE-Juel1)VDB786
|x 0
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
|g CNI
|z 381
|0 I:(DE-Juel1)VDB381
|x 1
970 _ _ |a VDB:(DE-Juel1)88132
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a UNRESTRICTED
980 1 _ |a FullTexts
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)VDB381

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