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@ARTICLE{Gerber:56193,
      author       = {Gerber, A. and Kohlstedt, H. and Fitsilis, M. and Waser,
                      R.},
      title        = {{L}ow-voltage operation of
                      metal-ferroelectric-insulator-semiconductor diodes
                      incorporating a ferroelectric polyvinylidene fluoride
                      copolymer {L}angmuir-{B}lodgett film},
      journal      = {Journal of applied physics},
      volume       = {100},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-56193},
      pages        = {024110},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We report the electrical characteristics of
                      metal-ferroelectric-insulator-semiconductor structures,
                      where the ferroelectric layer is a Langmuir-Blodgett film of
                      a copolymer of $70\%$ vinylidene fluoride and $30\%$
                      trifluoroethylene. The 36-nm thick copolymer films were
                      deposited on thermally oxidized (10 nm SiO2) p-type silicon
                      and covered with a gold gate electrode. Polarization-field
                      hysteresis loops indicate polarization switching in the
                      polymer film. The device capacitance shows hysteresis when
                      cycling the applied voltage between +/- 3 V, exhibiting a
                      zero-bias on/off capacitance ratio of over 3:1 and a
                      symmetric memory window 1 V wide, with little evidence of
                      bias that can arise from traps in the oxide. Model
                      calculations are in good agreement with the data and show
                      that film polarization was not saturated. The capacitance
                      hysteresis vanishes above the ferroelectric-paraelectric
                      transition temperature, showing that it is due to
                      polarization hysteresis. The retention time of both the on
                      and off states was approximately 15 min at room temperature,
                      possibly limited by leakage or by polarization instability
                      in the unsaturated film. These devices provide a basis for
                      nonvolatile data storage devices with fast nondestructive
                      readout. (c) 2006 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000239423400104},
      doi          = {10.1063/1.2218463},
      url          = {https://juser.fz-juelich.de/record/56193},
}