% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Thomas:56487,
      author       = {Thomas, R. and Ehrhart, P. and Roeckerath, M. and van
                      Elshocht, S. and Rije, E. and Luysberg, M. and Boese, M. and
                      Schubert, J. and Caymax, M. and Waser, R.},
      title        = {{L}iquid {I}njection {MOCVD} of {D}ysprosium {S}candate
                      {F}ilms: {D}eposition {C}haracteristics and {H}igh-k
                      {A}pplications},
      journal      = {Journal of the Electrochemical Society},
      volume       = {154},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-56487},
      pages        = {G147 - G154},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Crystalline Dy2O3, Sc2O3, and amorphous high-k DyScO3 thin
                      films have been deposited on Si(100) substrates by
                      metallorganic chemical vapor deposition (MOCVD) using two
                      metal precursors M(EDMDD)(3) [M=Dy, Sc; EDMDD=6-Ethyl-2,2-Di
                      Methyl -3,5-Decane Dionato]. The precursors were evaluated
                      in terms of efficiency and growth rate under various
                      conditions, viz. vaporizer and susceptor temperatures,
                      reactor pressure, injection rate, and injection delay
                      between the two precursors. Amorphous DyScO3 films with
                      nearly correct stoichiometry were deposited within the
                      temperature range of 560-700 degrees C. These amorphous
                      films were smoother than the crystalline binary oxides and
                      reached a density of around $85\%$ of the bulk crystalline
                      density. Amorphous structure and surface smoothness retained
                      up to an annealing temperature as high as 950 degrees C. The
                      thickness of the SiOx interlayer did not vary with
                      deposition temperature, but annealing at temperatures above
                      900 degrees C increased the interlayer thickness. Electrical
                      properties are promising; the dielectric constant of DyScO3
                      (k approximate to 22) is much higher than that of the binary
                      oxides Dy2O3 and Sc2O3 (k approximate to 10), and the
                      leakage currents are very low compared to SiO2. (C) 2007 The
                      Electrochemical Society.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / CNI / IFF-6 / IFF-8 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB799 / I:(DE-Juel1)VDB381 /
                      I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB788 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000246892000047},
      doi          = {10.1149/1.2731299},
      url          = {https://juser.fz-juelich.de/record/56487},
}