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000005654 0247_ $$2DOI$$a10.1016/j.vacuum.2009.05.017
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000005654 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000005654 084__ $$2WoS$$aPhysics, Applied
000005654 1001_ $$0P:(DE-HGF)0$$aVincze, A.$$b0
000005654 245__ $$aThermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD
000005654 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2010
000005654 300__ $$a170-173
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000005654 520__ $$aWe have studied thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection metal-organic chemical vapour deposition (MOCVD). In the present work, we report on the characterization of LaLuO3 and GdScO3 thin dielectric films by SIMS and capacitance-voltage (C-V) measurements. In both GdScO3 and LaLuO3 films, SIMS analysis revealed the presence of a silicate interfacial layer. The C-V characteristics were found to be shifted after thermal treatment to negative and positive voltages for GdScO3 and LaLuO3 films, respectively. Furthermore we have observed that LaLuO3 films exhibit C-V characteristics more stable to annealing conditions compared with GdScO3 films. (C) 2009 Elsevier Ltd. All rights reserved.
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000005654 65320 $$2Author$$aHigh-kappa Dielectrics
000005654 65320 $$2Author$$aC-V measurements
000005654 65320 $$2Author$$aThermal treatment
000005654 65320 $$2Author$$aSIMS
000005654 65320 $$2Author$$aCET
000005654 7001_ $$0P:(DE-Juel1)VDB76324$$aLuptak, R.$$b1$$uFZJ
000005654 7001_ $$0P:(DE-HGF)0$$aHuseková, K.$$b2
000005654 7001_ $$0P:(DE-HGF)0$$aDobrocka, E.$$b3
000005654 7001_ $$0P:(DE-HGF)0$$aFröhlich, K.$$b4
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000005654 8567_ $$uhttp://dx.doi.org/10.1016/j.vacuum.2009.05.017
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