TY  - JOUR
AU  - Vincze, A.
AU  - Luptak, R.
AU  - Huseková, K.
AU  - Dobrocka, E.
AU  - Fröhlich, K.
TI  - Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD
JO  - Vacuum
VL  - 84
SN  - 0042-207X
CY  - Amsterdam [u.a.]
PB  - Elsevier Science
M1  - PreJuSER-5654
SP  - 170-173
PY  - 2010
N1  - Record converted from VDB: 12.11.2012
AB  - We have studied thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection metal-organic chemical vapour deposition (MOCVD). In the present work, we report on the characterization of LaLuO3 and GdScO3 thin dielectric films by SIMS and capacitance-voltage (C-V) measurements. In both GdScO3 and LaLuO3 films, SIMS analysis revealed the presence of a silicate interfacial layer. The C-V characteristics were found to be shifted after thermal treatment to negative and positive voltages for GdScO3 and LaLuO3 films, respectively. Furthermore we have observed that LaLuO3 films exhibit C-V characteristics more stable to annealing conditions compared with GdScO3 films. (C) 2009 Elsevier Ltd. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000270625900044
DO  - DOI:10.1016/j.vacuum.2009.05.017
UR  - https://juser.fz-juelich.de/record/5654
ER  -