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024 7 _ |2 DOI
|a 10.1016/j.vacuum.2009.05.017
024 7 _ |2 WOS
|a WOS:000270625900044
037 _ _ |a PreJuSER-5654
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Vincze, A.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD
260 _ _ |a Amsterdam [u.a.]
|b Elsevier Science
|c 2010
300 _ _ |a 170-173
336 7 _ |a Journal Article
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440 _ 0 |a Vacuum
|x 0042-207X
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|v 84
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We have studied thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection metal-organic chemical vapour deposition (MOCVD). In the present work, we report on the characterization of LaLuO3 and GdScO3 thin dielectric films by SIMS and capacitance-voltage (C-V) measurements. In both GdScO3 and LaLuO3 films, SIMS analysis revealed the presence of a silicate interfacial layer. The C-V characteristics were found to be shifted after thermal treatment to negative and positive voltages for GdScO3 and LaLuO3 films, respectively. Furthermore we have observed that LaLuO3 films exhibit C-V characteristics more stable to annealing conditions compared with GdScO3 films. (C) 2009 Elsevier Ltd. All rights reserved.
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653 2 0 |2 Author
|a High-kappa Dielectrics
653 2 0 |2 Author
|a C-V measurements
653 2 0 |2 Author
|a Thermal treatment
653 2 0 |2 Author
|a SIMS
653 2 0 |2 Author
|a CET
700 1 _ |a Luptak, R.
|b 1
|u FZJ
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700 1 _ |a Huseková, K.
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700 1 _ |a Dobrocka, E.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Fröhlich, K.
|b 4
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773 _ _ |a 10.1016/j.vacuum.2009.05.017
|g Vol. 84, p. 170-173
|p 170-173
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|0 PERI:(DE-600)1479044-0
|t Vacuum
|v 84
|y 2010
|x 0042-207X
856 7 _ |u http://dx.doi.org/10.1016/j.vacuum.2009.05.017
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914 1 _ |y 2009
915 _ _ |0 StatID:(DE-HGF)0010
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920 1 _ |d 31.12.2010
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