Hauptseite > Publikationsdatenbank > Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD > print |
001 | 5654 | ||
005 | 20180208212327.0 | ||
024 | 7 | _ | |2 DOI |a 10.1016/j.vacuum.2009.05.017 |
024 | 7 | _ | |2 WOS |a WOS:000270625900044 |
037 | _ | _ | |a PreJuSER-5654 |
041 | _ | _ | |a eng |
082 | _ | _ | |a 530 |
084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
084 | _ | _ | |2 WoS |a Physics, Applied |
100 | 1 | _ | |a Vincze, A. |b 0 |0 P:(DE-HGF)0 |
245 | _ | _ | |a Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD |
260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier Science |c 2010 |
300 | _ | _ | |a 170-173 |
336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
336 | 7 | _ | |a article |2 DRIVER |
440 | _ | 0 | |a Vacuum |x 0042-207X |0 5896 |v 84 |
500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
520 | _ | _ | |a We have studied thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection metal-organic chemical vapour deposition (MOCVD). In the present work, we report on the characterization of LaLuO3 and GdScO3 thin dielectric films by SIMS and capacitance-voltage (C-V) measurements. In both GdScO3 and LaLuO3 films, SIMS analysis revealed the presence of a silicate interfacial layer. The C-V characteristics were found to be shifted after thermal treatment to negative and positive voltages for GdScO3 and LaLuO3 films, respectively. Furthermore we have observed that LaLuO3 films exhibit C-V characteristics more stable to annealing conditions compared with GdScO3 films. (C) 2009 Elsevier Ltd. All rights reserved. |
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588 | _ | _ | |a Dataset connected to Web of Science |
650 | _ | 7 | |a J |2 WoSType |
653 | 2 | 0 | |2 Author |a High-kappa Dielectrics |
653 | 2 | 0 | |2 Author |a C-V measurements |
653 | 2 | 0 | |2 Author |a Thermal treatment |
653 | 2 | 0 | |2 Author |a SIMS |
653 | 2 | 0 | |2 Author |a CET |
700 | 1 | _ | |a Luptak, R. |b 1 |u FZJ |0 P:(DE-Juel1)VDB76324 |
700 | 1 | _ | |a Huseková, K. |b 2 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Dobrocka, E. |b 3 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Fröhlich, K. |b 4 |0 P:(DE-HGF)0 |
773 | _ | _ | |a 10.1016/j.vacuum.2009.05.017 |g Vol. 84, p. 170-173 |p 170-173 |q 84<170-173 |0 PERI:(DE-600)1479044-0 |t Vacuum |v 84 |y 2010 |x 0042-207X |
856 | 7 | _ | |u http://dx.doi.org/10.1016/j.vacuum.2009.05.017 |
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914 | 1 | _ | |y 2009 |
915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
920 | 1 | _ | |d 31.12.2010 |g IBN |k IBN-1 |l Halbleiter-Nanoelektronik |0 I:(DE-Juel1)VDB799 |x 0 |
920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
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980 | _ | _ | |a UNRESTRICTED |
981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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