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000057063 0247_ $$2DOI$$a10.1109/TNANO.2006.885016
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000057063 041__ $$aeng
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000057063 084__ $$2WoS$$aEngineering, Electrical & Electronic
000057063 084__ $$2WoS$$aNanoscience & Nanotechnology
000057063 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000057063 084__ $$2WoS$$aPhysics, Applied
000057063 1001_ $$0P:(DE-HGF)0$$aMustafa, J.$$b0
000057063 245__ $$aA novel reference scheme for reading passive resistive crossbar memories
000057063 260__ $$aNew York, NY$$bIEEE$$c2006
000057063 300__ $$a687 - 691
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000057063 440_0 $$015701$$aIEEE Transactions on Nanotechnology$$v5$$x1536-125X$$y6
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000057063 520__ $$aA great effort today is concentrated on the development of resistive hysteretic materials and their related memory architecture. Resistive memories have a promising future to replace all current memory technologies to present an all-in-one memory solution. Passive resistive memories are of a special importance, since they can be scaled into the nanometer range without losing their functionality. This work is concerned with a novel scheme for generating reference voltages for the read operation. The scheme can be used with any passive crossbar based memory, regardless of the materials used for the implementation of the memory elements.
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000057063 65320 $$2Author$$ahysteretic resistive elements
000057063 65320 $$2Author$$anano-scale
000057063 65320 $$2Author$$apassive crossbar array
000057063 65320 $$2Author$$areference scheme
000057063 65320 $$2Author$$aresistive memory
000057063 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b1$$uFZJ
000057063 773__ $$0PERI:(DE-600)2082654-0$$a10.1109/TNANO.2006.885016$$gVol. 5, p. 687 - 691$$p687 - 691$$q5<687 - 691$$tIEEE transactions on nanotechnology$$v5$$x1536-125X$$y2006
000057063 8567_ $$uhttp://dx.doi.org/10.1109/TNANO.2006.885016
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000057063 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x2
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