TY  - JOUR
AU  - Mustafa, J.
AU  - Waser, R.
TI  - A novel reference scheme for reading passive resistive crossbar memories
JO  - IEEE transactions on nanotechnology
VL  - 5
SN  - 1536-125X
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-57063
SP  - 687 - 691
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - A great effort today is concentrated on the development of resistive hysteretic materials and their related memory architecture. Resistive memories have a promising future to replace all current memory technologies to present an all-in-one memory solution. Passive resistive memories are of a special importance, since they can be scaled into the nanometer range without losing their functionality. This work is concerned with a novel scheme for generating reference voltages for the read operation. The scheme can be used with any passive crossbar based memory, regardless of the materials used for the implementation of the memory elements.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000242840200009
DO  - DOI:10.1109/TNANO.2006.885016
UR  - https://juser.fz-juelich.de/record/57063
ER  -