% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Mustafa:57063,
author = {Mustafa, J. and Waser, R.},
title = {{A} novel reference scheme for reading passive resistive
crossbar memories},
journal = {IEEE transactions on nanotechnology},
volume = {5},
issn = {1536-125X},
address = {New York, NY},
publisher = {IEEE},
reportid = {PreJuSER-57063},
pages = {687 - 691},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {A great effort today is concentrated on the development of
resistive hysteretic materials and their related memory
architecture. Resistive memories have a promising future to
replace all current memory technologies to present an
all-in-one memory solution. Passive resistive memories are
of a special importance, since they can be scaled into the
nanometer range without losing their functionality. This
work is concerned with a novel scheme for generating
reference voltages for the read operation. The scheme can be
used with any passive crossbar based memory, regardless of
the materials used for the implementation of the memory
elements.},
keywords = {J (WoSType)},
cin = {IFF-IEM / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB321 / $I:(DE-82)080009_20140620$},
pnm = {Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK414},
shelfmark = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
Nanotechnology / Materials Science, Multidisciplinary /
Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000242840200009},
doi = {10.1109/TNANO.2006.885016},
url = {https://juser.fz-juelich.de/record/57063},
}