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| 001 | 57063 | ||
| 005 | 20190625110822.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1109/TNANO.2006.885016 |
| 024 | 7 | _ | |2 WOS |a WOS:000242840200009 |
| 024 | 7 | _ | |a altmetric:21817126 |2 altmetric |
| 037 | _ | _ | |a PreJuSER-57063 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Nanoscience & Nanotechnology |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Mustafa, J. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a A novel reference scheme for reading passive resistive crossbar memories |
| 260 | _ | _ | |a New York, NY |b IEEE |c 2006 |
| 300 | _ | _ | |a 687 - 691 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a IEEE Transactions on Nanotechnology |x 1536-125X |0 15701 |y 6 |v 5 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a A great effort today is concentrated on the development of resistive hysteretic materials and their related memory architecture. Resistive memories have a promising future to replace all current memory technologies to present an all-in-one memory solution. Passive resistive memories are of a special importance, since they can be scaled into the nanometer range without losing their functionality. This work is concerned with a novel scheme for generating reference voltages for the read operation. The scheme can be used with any passive crossbar based memory, regardless of the materials used for the implementation of the memory elements. |
| 536 | _ | _ | |a Kondensierte Materie |c P54 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK414 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a hysteretic resistive elements |
| 653 | 2 | 0 | |2 Author |a nano-scale |
| 653 | 2 | 0 | |2 Author |a passive crossbar array |
| 653 | 2 | 0 | |2 Author |a reference scheme |
| 653 | 2 | 0 | |2 Author |a resistive memory |
| 700 | 1 | _ | |a Waser, R. |b 1 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1109/TNANO.2006.885016 |g Vol. 5, p. 687 - 691 |p 687 - 691 |q 5<687 - 691 |0 PERI:(DE-600)2082654-0 |t IEEE transactions on nanotechnology |v 5 |y 2006 |x 1536-125X |
| 856 | 7 | _ | |u http://dx.doi.org/10.1109/TNANO.2006.885016 |
| 909 | C | O | |o oai:juser.fz-juelich.de:57063 |p VDB |
| 913 | 1 | _ | |k P54 |v Kondensierte Materie |l Kondensierte Materie |b Materie |z entfällt bis 2009 |0 G:(DE-Juel1)FUEK414 |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |d 31.12.2006 |g IFF |k IFF-IEM |l Elektronische Materialien |0 I:(DE-Juel1)VDB321 |x 1 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 2 |
| 970 | _ | _ | |a VDB:(DE-Juel1)89775 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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