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| 001 | 57069 | ||
| 005 | 20240708133744.0 | ||
| 024 | 7 | _ | |2 WOS |a WOS:000242568300028 |
| 037 | _ | _ | |a PreJuSER-57069 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Optics |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Nesheva, D. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Preparation of micro- and nanocrystalline CdSe and CdS thin films suitable for sensor applications |
| 260 | _ | _ | |a Bucharest |b INOE & INFM |c 2006 |
| 300 | _ | _ | |a 2120 - 2125 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Optoelectronics and Advanced Materials |x 1454-4164 |0 10743 |y 6 |v 8 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Thin films of CdS (30-200 nm) and CdSe (10-100 nm) are prepared by physical vapour deposition using one-step (for CdS and CdSe) or step-by-step (for CdSe only) approach. Atomic force microscopy measurements reveal a grain size decrease with decreasing layer thickness. The effect is strongest in the step-by-step CdSe layers. Raman scattering measurements show an anticipated gradual increase of the scattered light from CdS layers with thickness and a non-monotonous change in the CdSe group, the intensity is strongest for the '50 nm' 'step-by-step' CdSe layer. This observation is ascribed to a size-induced increase of the optical band gap of a part of the microcrystals whose estimated size is similar to 8 nm. Room temperature investigations of the effect of exposure to a set of vapours (water, ethanol, ammonia, acetone, iodine) on the dc dark and steady state photoconductivity of CdS layers show a reasonable response of all US layers to water vapour. CdSe layers are rather insensitive with the exception of the '50 nm' layer, as the 'step-by-step' layer shows the best sensitivity to all vapours. The observed good gas-sensitivity of the 'step-by-step' CdSe layers is ascribed to a much greater integral interface area between nanocrystals and indicates that 'step-by-step' deposition of CdSe layers is quite promising for gas-sensor applications. |
| 536 | _ | _ | |a Erneuerbare Energien |c P11 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK401 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a thin films of CdS and CdSe |
| 653 | 2 | 0 | |2 Author |a physical vapour deposition |
| 653 | 2 | 0 | |2 Author |a atomic force microscopy |
| 653 | 2 | 0 | |2 Author |a dark and photoconductivity |
| 653 | 2 | 0 | |2 Author |a gas sensitivity |
| 700 | 1 | _ | |a Aneva, Z. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Reynolds, S. |b 2 |u FZJ |0 P:(DE-Juel1)VDB13366 |
| 700 | 1 | _ | |a Main, C. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Fitzgerald, A. G. |b 4 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |g Vol. 8, p. 2120 - 2125 |p 2120 - 2125 |q 8<2120 - 2125 |0 PERI:(DE-600)2163198-0 |t Journal of optoelectronics and advanced materials |v 8 |y 2006 |x 1454-4164 |
| 909 | C | O | |o oai:juser.fz-juelich.de:57069 |p VDB |
| 913 | 1 | _ | |k P11 |v Erneuerbare Energien |l Erneuerbare Energien |b Energie |0 G:(DE-Juel1)FUEK401 |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IPV |l Institut für Photovoltaik |d 31.12.2006 |g IPV |0 I:(DE-Juel1)VDB46 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)89781 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)IMD-3-20101013 |
| 981 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
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