TY  - JOUR
AU  - Meyer, R.
AU  - Kohlstedt, H.
TI  - 1-D simulation of a novel nonvolatile resistive random access memory device
JO  - IEEE transactions on ultrasonics, ferroelectrics, and frequency control
VL  - 53
SN  - 0885-3010
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-57083
SP  - 2340 - 2348
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - The operation of a novel, nonvolatile memory device based on a conductive ferroelectric/semiconductor thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady-state solution of the transport equation for electrons assuming a drift-diffusion transport mechanism and the Poisson equation. Special emphasis is put on the screening of the spontaneous polarization by conduction electrons as a function of the applied voltage. Depending on the orientation of the polarization in the ferroelectric layer, a high and a low resistive state are found, giving rise to a hysteretic I-V characteristic. The switching ratio, ranging from > 50% to several orders of magnitude, is calculated as a function of the dopant content. The suggested model provides one possible physical explanation of the I-V hysteresis observed for single-layer ferroelectric devices, if interfacial layers are taken into consideration. The approach will allow one to develop guidelines to improve the performance of these devices.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000242390900016
DO  - DOI:10.1109/TUFFC.2006.182
UR  - https://juser.fz-juelich.de/record/57083
ER  -