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@ARTICLE{Meyer:57083,
      author       = {Meyer, R. and Kohlstedt, H.},
      title        = {1-{D} simulation of a novel nonvolatile resistive random
                      access memory device},
      journal      = {IEEE transactions on ultrasonics, ferroelectrics, and
                      frequency control},
      volume       = {53},
      issn         = {0885-3010},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-57083},
      pages        = {2340 - 2348},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The operation of a novel, nonvolatile memory device based
                      on a conductive ferroelectric/semiconductor thin film
                      multilayer stack is simulated numerically. The simulation
                      involves the self-consistent steady-state solution of the
                      transport equation for electrons assuming a drift-diffusion
                      transport mechanism and the Poisson equation. Special
                      emphasis is put on the screening of the spontaneous
                      polarization by conduction electrons as a function of the
                      applied voltage. Depending on the orientation of the
                      polarization in the ferroelectric layer, a high and a low
                      resistive state are found, giving rise to a hysteretic I-V
                      characteristic. The switching ratio, ranging from > $50\%$
                      to several orders of magnitude, is calculated as a function
                      of the dopant content. The suggested model provides one
                      possible physical explanation of the I-V hysteresis observed
                      for single-layer ferroelectric devices, if interfacial
                      layers are taken into consideration. The approach will allow
                      one to develop guidelines to improve the performance of
                      these devices.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM},
      ddc          = {520},
      cid          = {I:(DE-Juel1)VDB321},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Acoustics / Engineering, Electrical $\&$ Electronic},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000242390900016},
      doi          = {10.1109/TUFFC.2006.182},
      url          = {https://juser.fz-juelich.de/record/57083},
}