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@ARTICLE{Meyer:57263,
      author       = {Meyer, R. and Waser, R.},
      title        = {{H}ysteretic resistance concepts in ferroelectric thin
                      films},
      journal      = {Journal of applied physics},
      volume       = {100},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-57263},
      pages        = {051611},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Hysteretic resistance effects based on a correlation
                      between ferroelectric polarization and conductivity might
                      become of particular interest for nonvolatile memory
                      applications, because they are not subject to the scaling
                      restrictions of charge based memories such as the
                      ferroelectric random access memory. Two basic concepts, a
                      metal-ferroelectric-metal structure and a
                      metal-ferroelectric-semiconductor structure are discussed in
                      the literature. This contribution discusses the principle of
                      operation of those concepts in terms of the band model. A
                      generalized model is proposed, which is based on a
                      conductive metal-ferroelectric-semiconductor-metal
                      structure. Here, the existence of a low and a high
                      conductive state originates from a switch of the
                      polarization in the ferroelectric layer and a resulting
                      positive or negative polarization charge at the
                      ferroelectric-semiconductor interface. Charge carriers in
                      the film are attracted by or depleted at the interface
                      giving rise to different local conductivities. By
                      simulation, the effect of internal screening caused by
                      mobile charge carriers on the hysteretic current-voltage
                      behavior and the depolarizing field in the ferroelectric are
                      estimated. The simulation discloses a switching ratio up to
                      several orders of magnitude and a conductivity window, which
                      scales with the donor concentration. It may also explain
                      resistive switching in systems consisting only of one
                      ferroelectric layer by assuming the presence of
                      nonferroelectric interface layers. (c) 2006 American
                      Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000240602500012},
      doi          = {10.1063/1.2337078},
      url          = {https://juser.fz-juelich.de/record/57263},
}