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| 001 | 57263 | ||
| 005 | 20200423204453.0 | ||
| 024 | 7 | _ | |a 10.1063/1.2337078 |2 DOI |
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| 024 | 7 | _ | |a 2128/17156 |2 Handle |
| 037 | _ | _ | |a PreJuSER-57263 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Meyer, R. |b 0 |u FZJ |0 P:(DE-Juel1)VDB5958 |
| 245 | _ | _ | |a Hysteretic resistance concepts in ferroelectric thin films |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2006 |
| 300 | _ | _ | |a 051611 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Applied Physics |x 0021-8979 |0 3051 |v 100 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Hysteretic resistance effects based on a correlation between ferroelectric polarization and conductivity might become of particular interest for nonvolatile memory applications, because they are not subject to the scaling restrictions of charge based memories such as the ferroelectric random access memory. Two basic concepts, a metal-ferroelectric-metal structure and a metal-ferroelectric-semiconductor structure are discussed in the literature. This contribution discusses the principle of operation of those concepts in terms of the band model. A generalized model is proposed, which is based on a conductive metal-ferroelectric-semiconductor-metal structure. Here, the existence of a low and a high conductive state originates from a switch of the polarization in the ferroelectric layer and a resulting positive or negative polarization charge at the ferroelectric-semiconductor interface. Charge carriers in the film are attracted by or depleted at the interface giving rise to different local conductivities. By simulation, the effect of internal screening caused by mobile charge carriers on the hysteretic current-voltage behavior and the depolarizing field in the ferroelectric are estimated. The simulation discloses a switching ratio up to several orders of magnitude and a conductivity window, which scales with the donor concentration. It may also explain resistive switching in systems consisting only of one ferroelectric layer by assuming the presence of nonferroelectric interface layers. (c) 2006 American Institute of Physics. |
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| 700 | 1 | _ | |a Waser, R. |b 1 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1063/1.2337078 |g Vol. 100, p. 051611 |p 051611 |q 100<051611 |0 PERI:(DE-600)1476463-5 |t Journal of applied physics |v 100 |y 2006 |x 0021-8979 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.2337078 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/57263/files/1.2337078.pdf |y OpenAccess |
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| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/57263/files/1.2337078.pdf?subformat=pdfa |x pdfa |y OpenAccess |
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