TY  - JOUR
AU  - Chan, K. Y.
AU  - Teo, B.-S.
TI  - Atomic force microscopy (AFM) and X-ray diffraction (XRD) investigations of copper thin films prepared by dc magnetron sputtering technique
JO  - Microelectronics Journal
VL  - 37
SN  - 0026-2692
CY  - Amsterdam [u.a.]
PB  - Elsevier Science
M1  - PreJuSER-57272
SP  - 1064 - 1071
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - This paper addresses the influences of sputtering power and deposition pressure on the surface morphology and structural behavior of dc magnetron sputter-deposited copper (Cu) thin films on p-type silicon grown at room temperature. Results from our experiments show that the deposition rate of the Cu film increases proportionally with the sputtering power and decreases with deposition pressure. From the atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis, high sputtering power enhances the microstructure of the Cu film through the surface diffusion mechanism of the adatom. The poor microstructure as a result of low sputtering power deposition was manifested with the smaller value of Cu film root mean square (RMS) roughness obtained. The deposition pressure has the contrary influence on structural properties of Cu film in which high deposition pressure favors the formation of voided boundaries film structure with degraded film crystallinity due to the shadowing effect, which varies with different deposition pressures. (c) 2006 Elsevier Ltd. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000240484700006
DO  - DOI:10.1016/j.mejo.2006.04.008
UR  - https://juser.fz-juelich.de/record/57272
ER  -