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@ARTICLE{Chan:57272,
      author       = {Chan, K. Y. and Teo, B.-S.},
      title        = {{A}tomic force microscopy ({AFM}) and {X}-ray diffraction
                      ({XRD}) investigations of copper thin films prepared by dc
                      magnetron sputtering technique},
      journal      = {Microelectronics Journal},
      volume       = {37},
      issn         = {0026-2692},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PreJuSER-57272},
      pages        = {1064 - 1071},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {This paper addresses the influences of sputtering power and
                      deposition pressure on the surface morphology and structural
                      behavior of dc magnetron sputter-deposited copper (Cu) thin
                      films on p-type silicon grown at room temperature. Results
                      from our experiments show that the deposition rate of the Cu
                      film increases proportionally with the sputtering power and
                      decreases with deposition pressure. From the atomic force
                      microscopy (AFM) and X-ray diffraction (XRD) analysis, high
                      sputtering power enhances the microstructure of the Cu film
                      through the surface diffusion mechanism of the adatom. The
                      poor microstructure as a result of low sputtering power
                      deposition was manifested with the smaller value of Cu film
                      root mean square (RMS) roughness obtained. The deposition
                      pressure has the contrary influence on structural properties
                      of Cu film in which high deposition pressure favors the
                      formation of voided boundaries film structure with degraded
                      film crystallinity due to the shadowing effect, which varies
                      with different deposition pressures. (c) 2006 Elsevier Ltd.
                      All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IPV},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB46},
      pnm          = {Erneuerbare Energien},
      pid          = {G:(DE-Juel1)FUEK401},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000240484700006},
      doi          = {10.1016/j.mejo.2006.04.008},
      url          = {https://juser.fz-juelich.de/record/57272},
}