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001     57272
005     20240708133746.0
024 7 _ |2 DOI
|a 10.1016/j.mejo.2006.04.008
024 7 _ |2 WOS
|a WOS:000240484700006
024 7 _ |2 ISSN
|a 1879-2391
037 _ _ |a PreJuSER-57272
041 _ _ |a eng
082 _ _ |a 620
084 _ _ |2 WoS
|a Engineering, Electrical & Electronic
084 _ _ |2 WoS
|a Nanoscience & Nanotechnology
100 1 _ |a Chan, K. Y.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB65132
245 _ _ |a Atomic force microscopy (AFM) and X-ray diffraction (XRD) investigations of copper thin films prepared by dc magnetron sputtering technique
260 _ _ |c 2006
|a Amsterdam [u.a.]
|b Elsevier Science
300 _ _ |a 1064 - 1071
336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a article
|2 DRIVER
440 _ 0 |a Microelectronics Journal
|x 0026-2692
|0 4349
|y 10
|v 37
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a This paper addresses the influences of sputtering power and deposition pressure on the surface morphology and structural behavior of dc magnetron sputter-deposited copper (Cu) thin films on p-type silicon grown at room temperature. Results from our experiments show that the deposition rate of the Cu film increases proportionally with the sputtering power and decreases with deposition pressure. From the atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis, high sputtering power enhances the microstructure of the Cu film through the surface diffusion mechanism of the adatom. The poor microstructure as a result of low sputtering power deposition was manifested with the smaller value of Cu film root mean square (RMS) roughness obtained. The deposition pressure has the contrary influence on structural properties of Cu film in which high deposition pressure favors the formation of voided boundaries film structure with degraded film crystallinity due to the shadowing effect, which varies with different deposition pressures. (c) 2006 Elsevier Ltd. All rights reserved.
536 _ _ |a Erneuerbare Energien
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650 _ 7 |a J
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653 2 0 |2 Author
|a copper
653 2 0 |2 Author
|a sputtering power
653 2 0 |2 Author
|a deposition pressure
653 2 0 |2 Author
|a morphology
653 2 0 |2 Author
|a microstructure
700 1 _ |a Teo, B.-S.
|b 1
|0 P:(DE-HGF)0
773 _ _ |0 PERI:(DE-600)2000567-2
|a 10.1016/j.mejo.2006.04.008
|g Vol. 37, p. 1064 - 1071
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|t Microelectronics Journal
|v 37
|x 0026-2692
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856 7 _ |u http://dx.doi.org/10.1016/j.mejo.2006.04.008
909 C O |o oai:juser.fz-juelich.de:57272
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915 _ _ |a JCR/ISI refereed
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920 1 _ |k IPV
|l Institut für Photovoltaik
|d 31.12.2006
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