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@PHDTHESIS{Jeong:5734,
      author       = {Jeong, Doo Seok},
      title        = {{R}esistive switching in {P}t/{T}i{O}$_{2}$/{P}t},
      volume       = {6},
      school       = {RWTH Aachen},
      type         = {Dr. (Univ.)},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-5734},
      isbn         = {978-3-89336-579-1},
      series       = {Schriften des Forschungszentrums Jülich. Information /
                      Information},
      pages        = {VII, 133 S.},
      year         = {2009},
      note         = {Record converted from VDB: 12.11.2012; RWTH Aachen, Diss.,
                      2009},
      abstract     = {Recently, the resistive switching behavior in TiO$_{2}$ has
                      drawn attention due to its application to resistive random
                      access memory (RRAM) devices. TiO$_{2}$ shows characteristic
                      non-volatile resistive switching behavior, i.e. reversible
                      switching between a high resistance state (HRS) and a low
                      resistance state (LRS). Both unipolar resistive switching
                      (URS) and bipolar resistive switching (BRS) are found to be
                      observed in TiO$_{2}$ depending on the compliance current
                      for the electroforming. In this thesis the characteristic
                      current-voltage (I-V) hysteresis in three different states
                      of TiO$_{2}$, pristine, URS-activated, and BRS-activated
                      states, was investigated and understood in terms of the
                      migration of oxygen vacancies in TiO$_{2}$. The IV
                      hysteresis of pristine TiO$_{2}$ was found to show volatile
                      behavior. That is, the temporary variation of the resistance
                      took place depending on the applied voltage. However, the
                      I-V hysteresis of URS- and BRS-activated states showed
                      non-volatile resistive switching behavior. Some evidences
                      proving the evolution of oxygen gas during electroforming
                      were obtained from time-of-flight secondary ion mass
                      spectroscopy analysis and the variation of the morphology of
                      switching cells induced by the electroforming. On the
                      assumption that a large number of oxygen vacancies are
                      introduced by the electroforming process, the I-V behavior
                      in electroformed switching cells was simulated with varying
                      the distribution of oxygen vacancies in electroformed
                      TiO$_{x}$ (x $\lesssim$ 2). The I-V hysteresis undergoing
                      the BRS was simulated with taking into consideration oxygen
                      formation/annihilation reactions at a Pt/TiO$_{x}$
                      interface. The oxygen-related reactions given as a function
                      of the applied voltage affect the distribution of oxygen
                      vacancies in TiO$_{x}$, consequently, the Schottky barrier
                      height at the cathode/TiO$_{x}$ interface is influenced by
                      the oxygen vacancy distribution. Therefore, the BRS behavior
                      including the electroforming characteristics could be
                      understood in terms of the oxygen-related electrochemical
                      reactions.},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/5734},
}