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@PHDTHESIS{Jeong:5734,
author = {Jeong, Doo Seok},
title = {{R}esistive switching in {P}t/{T}i{O}$_{2}$/{P}t},
volume = {6},
school = {RWTH Aachen},
type = {Dr. (Univ.)},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {PreJuSER-5734},
isbn = {978-3-89336-579-1},
series = {Schriften des Forschungszentrums Jülich. Information /
Information},
pages = {VII, 133 S.},
year = {2009},
note = {Record converted from VDB: 12.11.2012; RWTH Aachen, Diss.,
2009},
abstract = {Recently, the resistive switching behavior in TiO$_{2}$ has
drawn attention due to its application to resistive random
access memory (RRAM) devices. TiO$_{2}$ shows characteristic
non-volatile resistive switching behavior, i.e. reversible
switching between a high resistance state (HRS) and a low
resistance state (LRS). Both unipolar resistive switching
(URS) and bipolar resistive switching (BRS) are found to be
observed in TiO$_{2}$ depending on the compliance current
for the electroforming. In this thesis the characteristic
current-voltage (I-V) hysteresis in three different states
of TiO$_{2}$, pristine, URS-activated, and BRS-activated
states, was investigated and understood in terms of the
migration of oxygen vacancies in TiO$_{2}$. The IV
hysteresis of pristine TiO$_{2}$ was found to show volatile
behavior. That is, the temporary variation of the resistance
took place depending on the applied voltage. However, the
I-V hysteresis of URS- and BRS-activated states showed
non-volatile resistive switching behavior. Some evidences
proving the evolution of oxygen gas during electroforming
were obtained from time-of-flight secondary ion mass
spectroscopy analysis and the variation of the morphology of
switching cells induced by the electroforming. On the
assumption that a large number of oxygen vacancies are
introduced by the electroforming process, the I-V behavior
in electroformed switching cells was simulated with varying
the distribution of oxygen vacancies in electroformed
TiO$_{x}$ (x $\lesssim$ 2). The I-V hysteresis undergoing
the BRS was simulated with taking into consideration oxygen
formation/annihilation reactions at a Pt/TiO$_{x}$
interface. The oxygen-related reactions given as a function
of the applied voltage affect the distribution of oxygen
vacancies in TiO$_{x}$, consequently, the Schottky barrier
height at the cathode/TiO$_{x}$ interface is influenced by
the oxygen vacancy distribution. Therefore, the BRS behavior
including the electroforming characteristics could be
understood in terms of the oxygen-related electrochemical
reactions.},
cin = {IFF-6 / JARA-FIT},
ddc = {620},
cid = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
typ = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
url = {https://juser.fz-juelich.de/record/5734},
}