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| 001 | 5734 | ||
| 005 | 20210714101532.0 | ||
| 020 | _ | _ | |a 978-3-89336-579-1 |
| 024 | 7 | _ | |a 1866-1777 |2 ISSN |
| 024 | 7 | _ | |a 2128/28182 |2 Handle |
| 037 | _ | _ | |a PreJuSER-5734 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |0 P:(DE-Juel1)VDB58644 |a Jeong, Doo Seok |b 0 |e Corresponding author |g male |u FZJ |
| 245 | _ | _ | |a Resistive switching in Pt/TiO$_{2}$/Pt |
| 260 | _ | _ | |a Jülich |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag |c 2009 |
| 300 | _ | _ | |a VII, 133 S. |
| 336 | 7 | _ | |0 PUB:(DE-HGF)11 |2 PUB:(DE-HGF) |a Dissertation / PhD Thesis |
| 336 | 7 | _ | |0 PUB:(DE-HGF)3 |2 PUB:(DE-HGF) |a Book |
| 336 | 7 | _ | |0 2 |2 EndNote |a Thesis |
| 336 | 7 | _ | |2 DRIVER |a doctoralThesis |
| 336 | 7 | _ | |2 BibTeX |a PHDTHESIS |
| 336 | 7 | _ | |2 DataCite |a Output Types/Dissertation |
| 336 | 7 | _ | |2 ORCID |a DISSERTATION |
| 490 | 0 | _ | |0 PERI:(DE-600)2428215-7 |a Schriften des Forschungszentrums Jülich. Information / Information |v 6 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 502 | _ | _ | |a RWTH Aachen, Diss., 2009 |b Dr. (Univ.) |c RWTH Aachen |d 2009 |
| 520 | _ | _ | |a Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application to resistive random access memory (RRAM) devices. TiO$_{2}$ shows characteristic non-volatile resistive switching behavior, i.e. reversible switching between a high resistance state (HRS) and a low resistance state (LRS). Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) are found to be observed in TiO$_{2}$ depending on the compliance current for the electroforming. In this thesis the characteristic current-voltage (I-V) hysteresis in three different states of TiO$_{2}$, pristine, URS-activated, and BRS-activated states, was investigated and understood in terms of the migration of oxygen vacancies in TiO$_{2}$. The IV hysteresis of pristine TiO$_{2}$ was found to show volatile behavior. That is, the temporary variation of the resistance took place depending on the applied voltage. However, the I-V hysteresis of URS- and BRS-activated states showed non-volatile resistive switching behavior. Some evidences proving the evolution of oxygen gas during electroforming were obtained from time-of-flight secondary ion mass spectroscopy analysis and the variation of the morphology of switching cells induced by the electroforming. On the assumption that a large number of oxygen vacancies are introduced by the electroforming process, the I-V behavior in electroformed switching cells was simulated with varying the distribution of oxygen vacancies in electroformed TiO$_{x}$ (x $\lesssim$ 2). The I-V hysteresis undergoing the BRS was simulated with taking into consideration oxygen formation/annihilation reactions at a Pt/TiO$_{x}$ interface. The oxygen-related reactions given as a function of the applied voltage affect the distribution of oxygen vacancies in TiO$_{x}$, consequently, the Schottky barrier height at the cathode/TiO$_{x}$ interface is influenced by the oxygen vacancy distribution. Therefore, the BRS behavior including the electroforming characteristics could be understood in terms of the oxygen-related electrochemical reactions. |
| 536 | _ | _ | |0 G:(DE-Juel1)FUEK412 |2 G:(DE-HGF) |a Grundlagen für zukünftige Informationstechnologien |c P42 |x 0 |
| 655 | _ | 7 | |a Hochschulschrift |x Dissertation (Univ.) |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/5734/files/FZJ-5734.pdf |y OpenAccess |z Prepress version for printing |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/5734/files/FZJ-5734.jpg?subformat=icon-1440 |x icon-1440 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/5734/files/FZJ-5734.jpg?subformat=icon-180 |x icon-180 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/5734/files/FZJ-5734.jpg?subformat=icon-640 |x icon-640 |y OpenAccess |
| 909 | C | O | |o oai:juser.fz-juelich.de:5734 |p openaire |p open_access |p driver |p VDB |p dnbdelivery |
| 913 | 1 | _ | |0 G:(DE-Juel1)FUEK412 |b Schlüsseltechnologien |k P42 |l Grundlagen für zukünftige Informationstechnologien (FIT) |v Grundlagen für zukünftige Informationstechnologien |x 0 |
| 914 | 1 | _ | |y 2009 |
| 915 | _ | _ | |a OpenAccess |0 StatID:(DE-HGF)0510 |2 StatID |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)VDB786 |d 31.12.2010 |g IFF |k IFF-6 |l Elektronische Materialien |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |g JARA |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)113527 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a phd |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a JUWEL |
| 980 | _ | _ | |a FullTexts |
| 980 | 1 | _ | |a FullTexts |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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