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000057367 041__ $$aeng
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000057367 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000057367 084__ $$2WoS$$aPhysics, Condensed Matter
000057367 1001_ $$0P:(DE-HGF)0$$aHofer, C.$$b0
000057367 245__ $$aInfluence of thickness and Zr content on Ba(TixZr1-x)O3 thin films
000057367 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2006
000057367 300__ $$a153 - 157
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000057367 440_0 $$02058$$aFerroelectrics$$v332$$x0015-0193
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000057367 520__ $$aThe interface layer between the ferroelectric thin film and the electrodes have been stated to be responsible for the change of the permittivity in dependence of film thickness. Recent works in PZT and BST thin films have proved this. In this contribution we have shown the influence of thickness and the Zr content on the permittivity of Mn-doped Ba(TixZr1-x) O-3 thin films. The Zr content was varied between x = 0-100 at.-%. Samples where prepared by chemical solution deposition (CSD) with thickness between 50 nm and 350 nm.The investigation of the interface layer was performed as a function of temperature in the range of 300 K and 550 K. The complex impedance measurements for the thin films were performed in a frequency range between 100 Hz and 1 MHz. Results depicting the effect of film thickness on the interface layer capacitance will be presented.
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000057367 65320 $$2Author$$aBaTiO3
000057367 65320 $$2Author$$ainterface capacitance
000057367 65320 $$2Author$$acurie temperature
000057367 65320 $$2Author$$aactivation energy
000057367 65320 $$2Author$$adielectric properties
000057367 7001_ $$0P:(DE-HGF)0$$aHalder, S.$$b1
000057367 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
000057367 773__ $$0PERI:(DE-600)2042895-9$$a10.1080/00150190500316465$$gVol. 332, p. 153 - 157$$p153 - 157$$q332<153 - 157$$tFerroelectrics$$v332$$x0015-0193$$y2006
000057367 8567_ $$uhttp://dx.doi.org/10.1080/00150190500316465
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000057367 9141_ $$aNachtrag$$y2006
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000057367 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x1
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