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@ARTICLE{Hofer:57367,
author = {Hofer, C. and Halder, S. and Waser, R.},
title = {{I}nfluence of thickness and {Z}r content on
{B}a({T}ix{Z}r1-x){O}3 thin films},
journal = {Ferroelectrics},
volume = {332},
issn = {0015-0193},
address = {London [u.a.]},
publisher = {Taylor $\&$ Francis},
reportid = {PreJuSER-57367},
pages = {153 - 157},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {The interface layer between the ferroelectric thin film and
the electrodes have been stated to be responsible for the
change of the permittivity in dependence of film thickness.
Recent works in PZT and BST thin films have proved this. In
this contribution we have shown the influence of thickness
and the Zr content on the permittivity of Mn-doped
Ba(TixZr1-x) O-3 thin films. The Zr content was varied
between x = 0-100 $at.-\%.$ Samples where prepared by
chemical solution deposition (CSD) with thickness between 50
nm and 350 nm.The investigation of the interface layer was
performed as a function of temperature in the range of 300 K
and 550 K. The complex impedance measurements for the thin
films were performed in a frequency range between 100 Hz and
1 MHz. Results depicting the effect of film thickness on the
interface layer capacitance will be presented.},
keywords = {J (WoSType)},
cin = {IFF-IEM / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB321 / $I:(DE-82)080009_20140620$},
pnm = {Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK414},
shelfmark = {Materials Science, Multidisciplinary / Physics, Condensed
Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000238786900024},
doi = {10.1080/00150190500316465},
url = {https://juser.fz-juelich.de/record/57367},
}