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| Hauptseite > Publikationsdatenbank > Influence of thickness and Zr content on Ba(TixZr1-x)O3 thin films > print |
| Hauptseite > Publikationsdatenbank > Influence of thickness and Zr content on Ba(TixZr1-x)O3 thin films > print |
| 001 | 57367 | ||
| 005 | 20180211190249.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1080/00150190500316465 |
| 024 | 7 | _ | |2 WOS |a WOS:000238786900024 |
| 037 | _ | _ | |a PreJuSER-57367 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Hofer, C. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Influence of thickness and Zr content on Ba(TixZr1-x)O3 thin films |
| 260 | _ | _ | |a London [u.a.] |b Taylor & Francis |c 2006 |
| 300 | _ | _ | |a 153 - 157 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Ferroelectrics |x 0015-0193 |0 2058 |v 332 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The interface layer between the ferroelectric thin film and the electrodes have been stated to be responsible for the change of the permittivity in dependence of film thickness. Recent works in PZT and BST thin films have proved this. In this contribution we have shown the influence of thickness and the Zr content on the permittivity of Mn-doped Ba(TixZr1-x) O-3 thin films. The Zr content was varied between x = 0-100 at.-%. Samples where prepared by chemical solution deposition (CSD) with thickness between 50 nm and 350 nm.The investigation of the interface layer was performed as a function of temperature in the range of 300 K and 550 K. The complex impedance measurements for the thin films were performed in a frequency range between 100 Hz and 1 MHz. Results depicting the effect of film thickness on the interface layer capacitance will be presented. |
| 536 | _ | _ | |a Kondensierte Materie |c P54 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK414 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a BaTiO3 |
| 653 | 2 | 0 | |2 Author |a interface capacitance |
| 653 | 2 | 0 | |2 Author |a curie temperature |
| 653 | 2 | 0 | |2 Author |a activation energy |
| 653 | 2 | 0 | |2 Author |a dielectric properties |
| 700 | 1 | _ | |a Halder, S. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Waser, R. |b 2 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1080/00150190500316465 |g Vol. 332, p. 153 - 157 |p 153 - 157 |q 332<153 - 157 |0 PERI:(DE-600)2042895-9 |t Ferroelectrics |v 332 |y 2006 |x 0015-0193 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1080/00150190500316465 |
| 909 | C | O | |o oai:juser.fz-juelich.de:57367 |p VDB |
| 913 | 1 | _ | |k P54 |v Kondensierte Materie |l Kondensierte Materie |b Materie |z entfällt bis 2009 |0 G:(DE-Juel1)FUEK414 |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |d 31.12.2006 |g IFF |k IFF-IEM |l Elektronische Materialien |0 I:(DE-Juel1)VDB321 |x 1 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 2 |
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| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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