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000057549 041__ $$aeng
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000057549 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000057549 084__ $$2WoS$$aMechanics
000057549 084__ $$2WoS$$aMetallurgy & Metallurgical Engineering
000057549 084__ $$2WoS$$aPhysics, Applied
000057549 084__ $$2WoS$$aPhysics, Condensed Matter
000057549 1001_ $$0P:(DE-Juel1)VDB15124$$aDing, Y.$$b0$$uFZJ
000057549 245__ $$aTranslation and orientation domain boundaries in La2/3Ca1/3MnO3
000057549 260__ $$aLondon [u.a.]$$bTaylor and Francis$$c2006
000057549 300__ $$a2329 - 2342
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000057549 440_0 $$011501$$aPhilosophical Magazine$$v86$$x0141-8610$$y16
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000057549 520__ $$aFrom crystal structure, three types of translation and two types of orientation domain boundaries are expected in La2/3Ca1/3MnO3 as a result of phase transition. However, the most easily observed domain boundaries in the bulk samples are [1/2 1/2 1/2] translation boundaries ( or antiphase boundaries) and 90 degrees domain boundaries, while the [1/2 0 1/2] and [0 1/2 0] translation boundaries were rarely observed. In this paper, this phenomenon is explained by considering the tilting modes of the oxygen octahedra in the structure. We found that there is no distortion to the nearby oxygen octahedra if the [1/2 1/2 1/2] translation boundaries take the ( 010) boundary planes and the 90 degrees domain boundaries are in the {101} planes, making them low-energy boundary planes and, thus, are easy to form. On the other hand, the [1/2 0 1/2] and [0 1/2 0] translation boundaries introduce a distortion in the oxygen octahedra, which requires breaking the tilting modes in the boundary areas and, therefore, they are high-energy boundary planes, which are rarely observed. The above-expected results are supported by our transmission electron microscopy data.
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000057549 7001_ $$0P:(DE-HGF)0$$aWang, Z. L.$$b1
000057549 773__ $$0PERI:(DE-600)2001649-9$$a10.1080/14786430500519780$$gVol. 86, p. 2329 - 2342$$p2329 - 2342$$q86<2329 - 2342$$tPhilosophical magazine <London> / A$$v86$$x0141-8610$$y2006
000057549 8567_ $$uhttp://dx.doi.org/10.1080/14786430500519780
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000057549 9141_ $$aNachtrag$$y2006
000057549 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000057549 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x1
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