000057558 001__ 57558
000057558 005__ 20200423204501.0
000057558 0247_ $$2DOI$$a10.1063/1.2185152
000057558 0247_ $$2WOS$$aWOS:000236739100028
000057558 0247_ $$2Handle$$a2128/16769
000057558 037__ $$aPreJuSER-57558
000057558 041__ $$aeng
000057558 082__ $$a530
000057558 084__ $$2WoS$$aInstruments & Instrumentation
000057558 084__ $$2WoS$$aPhysics, Applied
000057558 1001_ $$0P:(DE-HGF)0$$aPodgursky, V.$$b0
000057558 245__ $$aContact-mode scanning tunneling microscopy experimental technique employed for tunneling magnetoresistance measurements
000057558 260__ $$a[S.l.]$$bAmerican Institute of Physics$$c2006
000057558 300__ $$a033906
000057558 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000057558 3367_ $$2DataCite$$aOutput Types/Journal article
000057558 3367_ $$00$$2EndNote$$aJournal Article
000057558 3367_ $$2BibTeX$$aARTICLE
000057558 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000057558 3367_ $$2DRIVER$$aarticle
000057558 440_0 $$05309$$aReview of Scientific Instruments$$v77$$x0034-6748
000057558 500__ $$aRecord converted from VDB: 12.11.2012
000057558 520__ $$aWe employed contact-mode scanning tunneling microscopy technique to perform systematic measurements of micrometer-sized Co/Al2O3/Co magnetic tunnel junctions (MTJs). Magnetic multilayer was grown by means of magnetron sputtering, followed by patterning of MTJ on top of FeMn antiferromagnetic bias layer into an array of rectangular mesa structures by standard photolithography. The maximum of 12.5% tunneling magnetoresistance at room temperature was measured for up to 40x40 mu m(2) test MTJs. (c) 2006 American Institute of Physics.
000057558 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000057558 588__ $$aDataset connected to Web of Science
000057558 650_7 $$2WoSType$$aJ
000057558 7001_ $$0P:(DE-Juel1)VDB5644$$aAdam, R.$$b1$$uFZJ
000057558 7001_ $$0P:(DE-Juel1)VDB69531$$aTeske, M.$$b2$$uFZJ
000057558 7001_ $$0P:(DE-Juel1)129131$$aKrämer, M.$$b3$$uFZJ
000057558 7001_ $$0P:(DE-Juel1)VDB5400$$aFranchy, R.$$b4$$uFZJ
000057558 773__ $$0PERI:(DE-600)1472905-2$$a10.1063/1.2185152$$gVol. 77, p. 033906$$p033906$$q77<033906$$tReview of scientific instruments$$v77$$x0034-6748$$y2006
000057558 8567_ $$uhttp://dx.doi.org/10.1063/1.2185152
000057558 8564_ $$uhttps://juser.fz-juelich.de/record/57558/files/1.2185152.pdf$$yOpenAccess
000057558 8564_ $$uhttps://juser.fz-juelich.de/record/57558/files/1.2185152.gif?subformat=icon$$xicon$$yOpenAccess
000057558 8564_ $$uhttps://juser.fz-juelich.de/record/57558/files/1.2185152.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000057558 8564_ $$uhttps://juser.fz-juelich.de/record/57558/files/1.2185152.jpg?subformat=icon-700$$xicon-700$$yOpenAccess
000057558 8564_ $$uhttps://juser.fz-juelich.de/record/57558/files/1.2185152.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000057558 909CO $$ooai:juser.fz-juelich.de:57558$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000057558 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000057558 9141_ $$aNachtrag$$y2006
000057558 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000057558 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000057558 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x1
000057558 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x2$$z381
000057558 970__ $$aVDB:(DE-Juel1)90573
000057558 980__ $$aVDB
000057558 980__ $$aConvertedRecord
000057558 980__ $$ajournal
000057558 980__ $$aI:(DE-Juel1)PGI-3-20110106
000057558 980__ $$aI:(DE-Juel1)VDB381
000057558 980__ $$aUNRESTRICTED
000057558 9801_ $$aFullTexts
000057558 981__ $$aI:(DE-Juel1)PGI-3-20110106
000057558 981__ $$aI:(DE-Juel1)VDB381