Hauptseite > Publikationsdatenbank > Contact-mode scanning tunneling microscopy experimental technique employed for tunneling magnetoresistance measurements > print

001     57558
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024 7 _ |a 10.1063/1.2185152
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041 _ _ |a eng
082 _ _ |a 530
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|a Instruments & Instrumentation
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Podgursky, V.
|b 0
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245 _ _ |a Contact-mode scanning tunneling microscopy experimental technique employed for tunneling magnetoresistance measurements
260 _ _ |a [S.l.]
|b American Institute of Physics
|c 2006
300 _ _ |a 033906
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Review of Scientific Instruments
|x 0034-6748
|0 5309
|v 77
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We employed contact-mode scanning tunneling microscopy technique to perform systematic measurements of micrometer-sized Co/Al2O3/Co magnetic tunnel junctions (MTJs). Magnetic multilayer was grown by means of magnetron sputtering, followed by patterning of MTJ on top of FeMn antiferromagnetic bias layer into an array of rectangular mesa structures by standard photolithography. The maximum of 12.5% tunneling magnetoresistance at room temperature was measured for up to 40x40 mu m(2) test MTJs. (c) 2006 American Institute of Physics.
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700 1 _ |a Adam, R.
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700 1 _ |a Teske, M.
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700 1 _ |a Krämer, M.
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700 1 _ |a Franchy, R.
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773 _ _ |a 10.1063/1.2185152
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856 7 _ |u http://dx.doi.org/10.1063/1.2185152
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