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000057655 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000057655 084__ $$2WoS$$aMaterials Science, Coatings & Films
000057655 084__ $$2WoS$$aPhysics, Applied
000057655 084__ $$2WoS$$aPhysics, Condensed Matter
000057655 1001_ $$0P:(DE-Juel1)VDB5913$$aKluth, O.$$b0$$uFZJ
000057655 245__ $$aComparative material study on RF and DC magnetron sputtered ZnO:Al films
000057655 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2006
000057655 300__ $$a
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000057655 520__ $$aZnO:Al films were prepared on glass substrates by RF and DC sputtering from ceramic ZnO:Al2O3 targets. The film properties of RF sputtered ZnO:Al showed a weak dependence on film thickness and substrate temperature while a strong dependence on sputter pressure and oxygen addition to the process gas was observed. For DC sputtering in static mode at 270 degrees C a low resistivity of 2.3-5 x 10(-4) Omega cm was obtained in a wide pressure range of 0.04 to 4 Pa. At lower substrate temperatures the supply of small amounts of oxygen was required to maintain high transparency and achieve significant roughness for light scattering after wet chemical etching. Highest damp heat stability was found for ZnO:Al films deposited at low sputter pressures. This behavior could be correlated to the highly compact film structure of these films. ZnO:Al films deposited in dynamic DC mode exhibited inferior resistivity of 8-40 x 10(-4) Omega cm, which partly could be attributed to the specific design of the inline sputter system. (c) 2005 Elsevier B.V. All rights reserved.
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000057655 65320 $$2Author$$azinc oxide
000057655 65320 $$2Author$$athin-film solar cells
000057655 65320 $$2Author$$asputtering
000057655 65320 $$2Author$$asurface morphology
000057655 7001_ $$0P:(DE-Juel1)VDB5938$$aSchöpe, G.$$b1$$uFZJ
000057655 7001_ $$0P:(DE-Juel1)VDB5941$$aRech, B.$$b2$$uFZJ
000057655 7001_ $$0P:(DE-HGF)0$$aMenner, R.$$b3
000057655 7001_ $$0P:(DE-HGF)0$$aOertel, M.$$b4
000057655 7001_ $$0P:(DE-HGF)0$$aOrgassa, K.$$b5
000057655 7001_ $$0P:(DE-HGF)0$$aSchock, H. W.$$b6
000057655 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2005.07.313$$gVol. 502$$q502$$tThin solid films$$v502$$x0040-6090$$y2006
000057655 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2005.07.313
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000057655 9141_ $$aNachtrag$$y2006
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000057655 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x1
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