TY  - JOUR
AU  - Landrock, S.
AU  - Urban, K.
AU  - Ebert, Ph.
TI  - Spontaneous 2D Accumulation of Charged Be Dopants in GaAs p-n Superlattices
JO  - Physical review letters
VL  - 96
SN  - 0031-9007
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-57679
SP  - 076101
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - In a classical view, abrupt dopant profiles in semiconductors tend to be smoothed out by diffusion due to concentration gradients and repulsive screened Coulomb interactions between the charged dopants. We demonstrate, however, using cross-sectional scanning tunneling microscopy and secondary ion mass spectroscopy, that charged Be dopant atoms in GaAs p-n superlattices spontaneously accumulate and form two-dimensional dopant layers. These are stabilized by reduced repulsive screened Coulomb interactions between the charged dopants arising from the two-dimensional quantum mechanical confinement of charge carriers.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000235554100051
DO  - DOI:10.1103/PhysRevLett.96.076101
UR  - https://juser.fz-juelich.de/record/57679
ER  -