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@ARTICLE{Landrock:57679,
author = {Landrock, S. and Urban, K. and Ebert, Ph.},
title = {{S}pontaneous 2{D} {A}ccumulation of {C}harged {B}e
{D}opants in {G}a{A}s p-n {S}uperlattices},
journal = {Physical review letters},
volume = {96},
issn = {0031-9007},
address = {College Park, Md.},
publisher = {APS},
reportid = {PreJuSER-57679},
pages = {076101},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {In a classical view, abrupt dopant profiles in
semiconductors tend to be smoothed out by diffusion due to
concentration gradients and repulsive screened Coulomb
interactions between the charged dopants. We demonstrate,
however, using cross-sectional scanning tunneling microscopy
and secondary ion mass spectroscopy, that charged Be dopant
atoms in GaAs p-n superlattices spontaneously accumulate and
form two-dimensional dopant layers. These are stabilized by
reduced repulsive screened Coulomb interactions between the
charged dopants arising from the two-dimensional quantum
mechanical confinement of charge carriers.},
keywords = {J (WoSType)},
cin = {IFF-IMF / JARA-FIT},
ddc = {550},
cid = {I:(DE-Juel1)VDB37 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien /
Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK412 / G:(DE-Juel1)FUEK414},
shelfmark = {Physics, Multidisciplinary},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000235554100051},
doi = {10.1103/PhysRevLett.96.076101},
url = {https://juser.fz-juelich.de/record/57679},
}