Home > Publications database > Spontaneous 2D Accumulation of Charged Be Dopants in GaAs p-n Superlattices > print

001     57679
005     20240610121151.0
024 7 _ |a 10.1103/PhysRevLett.96.076101
|2 DOI
024 7 _ |a WOS:000235554100051
|2 WOS
024 7 _ |a 2128/7711
|2 Handle
037 _ _ |a PreJuSER-57679
041 _ _ |a eng
082 _ _ |a 550
084 _ _ |2 WoS
|a Physics, Multidisciplinary
100 1 _ |a Landrock, S.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB69642
245 _ _ |a Spontaneous 2D Accumulation of Charged Be Dopants in GaAs p-n Superlattices
260 _ _ |a College Park, Md.
|b APS
|c 2006
300 _ _ |a 076101
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Physical Review Letters
|x 0031-9007
|0 4925
|v 96
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a In a classical view, abrupt dopant profiles in semiconductors tend to be smoothed out by diffusion due to concentration gradients and repulsive screened Coulomb interactions between the charged dopants. We demonstrate, however, using cross-sectional scanning tunneling microscopy and secondary ion mass spectroscopy, that charged Be dopant atoms in GaAs p-n superlattices spontaneously accumulate and form two-dimensional dopant layers. These are stabilized by reduced repulsive screened Coulomb interactions between the charged dopants arising from the two-dimensional quantum mechanical confinement of charge carriers.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK412
|x 0
536 _ _ |a Kondensierte Materie
|c P54
|0 G:(DE-Juel1)FUEK414
|x 1
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Urban, K.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB4950
700 1 _ |a Ebert, Ph.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB18197
773 _ _ |a 10.1103/PhysRevLett.96.076101
|g Vol. 96, p. 076101
|p 076101
|q 96<076101
|0 PERI:(DE-600)1472655-5
|t Physical review letters
|v 96
|y 2006
|x 0031-9007
856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.96.076101
856 4 _ |u https://juser.fz-juelich.de/record/57679/files/FZJ-57679.pdf
|y OpenAccess
|z Published final document.
856 4 _ |u https://juser.fz-juelich.de/record/57679/files/FZJ-57679.jpg?subformat=icon-1440
|x icon-1440
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/57679/files/FZJ-57679.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/57679/files/FZJ-57679.jpg?subformat=icon-640
|x icon-640
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:57679
|p openaire
|p open_access
|p driver
|p VDB
|p dnbdelivery
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
913 1 _ |k P54
|v Kondensierte Materie
|l Kondensierte Materie
|b Materie
|z entfällt bis 2009
|0 G:(DE-Juel1)FUEK414
|x 1
914 1 _ |a Nachtrag
|y 2006
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a American Physical Society Transfer of Copyright Agreement
|0 LIC:(DE-HGF)APS-112012
|2 HGFVOC
920 1 _ |d 31.12.2006
|g IFF
|k IFF-IMF
|l Mikrostrukturforschung
|0 I:(DE-Juel1)VDB37
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|g JARA
|x 1
970 _ _ |a VDB:(DE-Juel1)90717
980 1 _ |a FullTexts
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-5-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
980 _ _ |a FullTexts
981 _ _ |a I:(DE-Juel1)ER-C-1-20170209
981 _ _ |a I:(DE-Juel1)PGI-5-20110106
981 _ _ |a I:(DE-Juel1)VDB881

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