TY  - JOUR
AU  - Schroeder, H.
AU  - Jeong, D. S.
TI  - Resistive switching in a Pt/TiO2/Pt thin film stack - a candidate for a non-volatile ReRAM
JO  - Microelectronic engineering
VL  - 84
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - PreJuSER-57725
SP  - 1982 - 1985
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - In Pt/27 nm thick TiO2/Pt stacks bipolar and unipolar resistive switching (BRS, URS) behavior of were investigated. Depending on the current compliance during electrofon-ning process, BRS or URS could be observed: With a lower current compliance (<0.1 mA) asymmetric current-voltage (IN) curves (BRS) were measured in the voltage range -1.6V to + 1.1V, while with a higher current compliance (1 to 10mA) the URS behavior was observed. Furthermore, the permanent transition from BRS to URS was investigated by applying voltage with a higher current compliance (similar to 3 mA). Preliminary results of microstructural investigations show heavily damaged regions in the stacks.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000247378600033
DO  - DOI:10.1016/j.mee.2007.04.042
UR  - https://juser.fz-juelich.de/record/57725
ER  -