000057738 001__ 57738
000057738 005__ 20200423204505.0
000057738 0247_ $$2DOI$$a10.1103/PhysRevLett.96.106103
000057738 0247_ $$2WOS$$aWOS:000236062800055
000057738 0247_ $$2Handle$$a2128/7715
000057738 037__ $$aPreJuSER-57738
000057738 041__ $$aeng
000057738 082__ $$a550
000057738 084__ $$2WoS$$aPhysics, Multidisciplinary
000057738 1001_ $$0P:(DE-HGF)0$$aRedinger, A.$$b0
000057738 245__ $$aSuperior regularity in erosion patterns by planar subsurface channeling
000057738 260__ $$aCollege Park, Md.$$bAPS$$c2006
000057738 300__ $$a106103
000057738 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000057738 3367_ $$2DataCite$$aOutput Types/Journal article
000057738 3367_ $$00$$2EndNote$$aJournal Article
000057738 3367_ $$2BibTeX$$aARTICLE
000057738 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000057738 3367_ $$2DRIVER$$aarticle
000057738 440_0 $$04925$$aPhysical Review Letters$$v96$$x0031-9007
000057738 500__ $$aRecord converted from VDB: 12.11.2012
000057738 520__ $$aThe onset of pattern formation through exposure of Pt(111) with 5 keV Ar+ ions at grazing incidence has been studied at 550 K by scanning tunneling microscopy and is supplemented by molecular-dynamics simulations of single ion impacts. A consistent description of pattern formation in terms of atomic scale mechanisms is given. Most surprisingly, pattern formation depends crucially on the angle of incidence of the ions. As soon as this angle allows subsurface channeling of the ions, pattern regularity and alignment with respect to the ion beam greatly improves. These effects are traced back to the positionally aligned formation of vacancy islands through the damage created by the ions at dechanneling locations.
000057738 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000057738 588__ $$aDataset connected to Web of Science
000057738 650_7 $$2WoSType$$aJ
000057738 7001_ $$0P:(DE-HGF)0$$aHansen, H.$$b1
000057738 7001_ $$0P:(DE-Juel1)VDB23435$$aLinke, U.$$b2$$uFZJ
000057738 7001_ $$0P:(DE-HGF)0$$aRosandi, Y.$$b3
000057738 7001_ $$0P:(DE-HGF)0$$aUrbassek, H. M.$$b4
000057738 7001_ $$0P:(DE-HGF)0$$aMichely, T.$$b5
000057738 773__ $$0PERI:(DE-600)1472655-5$$a10.1103/PhysRevLett.96.106103$$gVol. 96, p. 106103$$p106103$$q96<106103$$tPhysical review letters$$v96$$x0031-9007$$y2006
000057738 8567_ $$uhttp://dx.doi.org/10.1103/PhysRevLett.96.106103
000057738 8564_ $$uhttps://juser.fz-juelich.de/record/57738/files/FZJ-57738.pdf$$yOpenAccess$$zPublished final document.
000057738 8564_ $$uhttps://juser.fz-juelich.de/record/57738/files/FZJ-57738.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000057738 8564_ $$uhttps://juser.fz-juelich.de/record/57738/files/FZJ-57738.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000057738 8564_ $$uhttps://juser.fz-juelich.de/record/57738/files/FZJ-57738.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000057738 909CO $$ooai:juser.fz-juelich.de:57738$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000057738 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000057738 9141_ $$aNachtrag$$y2006
000057738 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000057738 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000057738 915__ $$0LIC:(DE-HGF)APS-112012$$2HGFVOC$$aAmerican Physical Society Transfer of Copyright Agreement
000057738 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x1
000057738 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x2$$z381
000057738 970__ $$aVDB:(DE-Juel1)90832
000057738 980__ $$aVDB
000057738 980__ $$aConvertedRecord
000057738 980__ $$ajournal
000057738 980__ $$aI:(DE-Juel1)PGI-3-20110106
000057738 980__ $$aI:(DE-Juel1)VDB381
000057738 980__ $$aUNRESTRICTED
000057738 980__ $$aFullTexts
000057738 9801_ $$aFullTexts
000057738 981__ $$aI:(DE-Juel1)PGI-3-20110106
000057738 981__ $$aI:(DE-Juel1)VDB381