000057787 001__ 57787
000057787 005__ 20200423204506.0
000057787 0247_ $$2DOI$$a10.1063/1.2183370
000057787 0247_ $$2WOS$$aWOS:000235905800051
000057787 0247_ $$2Handle$$a2128/17980
000057787 037__ $$aPreJuSER-57787
000057787 041__ $$aeng
000057787 082__ $$a530
000057787 084__ $$2WoS$$aPhysics, Applied
000057787 1001_ $$0P:(DE-HGF)0$$aKuzel, P.$$b0
000057787 245__ $$aDielectric tunability of SrTiO3 thin films in the terahertz range
000057787 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2006
000057787 300__ $$a102901
000057787 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000057787 3367_ $$2DataCite$$aOutput Types/Journal article
000057787 3367_ $$00$$2EndNote$$aJournal Article
000057787 3367_ $$2BibTeX$$aARTICLE
000057787 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000057787 3367_ $$2DRIVER$$aarticle
000057787 440_0 $$0562$$aApplied Physics Letters$$v88$$x0003-6951
000057787 500__ $$aRecord converted from VDB: 12.11.2012
000057787 520__ $$aWe have developed an interdigited electrode structure for applying a static electric field to a ferroelectric thin film, which enables nearly full transmission of a perpendicularly polarized terahertz wave. This approach has been used to determine the electric field dependence of the complex permittivity of a SrTiO3 thin film on a sapphire substrate up to about 2 THz employing time-domain terahertz spectroscopy. We have demonstrated up to 10% variation of the film permittivity at 300 GHz at room temperature induced by an applied electric field of 100 kV/cm. No dielectric dispersion is observed between 1 MHz and about 500 GHz. The field-induced changes are attributed to soft mode hardening. (c) 2006 American Institute of Physics.
000057787 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000057787 588__ $$aDataset connected to Web of Science
000057787 650_7 $$2WoSType$$aJ
000057787 7001_ $$0P:(DE-HGF)0$$aKadlec, F.$$b1
000057787 7001_ $$0P:(DE-HGF)0$$aNemec, H.$$b2
000057787 7001_ $$0P:(DE-Juel1)VDB5554$$aOtt, R.$$b3$$uFZJ
000057787 7001_ $$0P:(DE-Juel1)VDB8300$$aHollmann, E.$$b4$$uFZJ
000057787 7001_ $$0P:(DE-Juel1)VDB5428$$aKlein, N.$$b5$$uFZJ
000057787 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.2183370$$gVol. 88, p. 102901$$p102901$$q88<102901$$tApplied physics letters$$v88$$x0003-6951$$y2006
000057787 8567_ $$uhttp://dx.doi.org/10.1063/1.2183370
000057787 8564_ $$uhttps://juser.fz-juelich.de/record/57787/files/1.2183370.pdf$$yOpenAccess
000057787 8564_ $$uhttps://juser.fz-juelich.de/record/57787/files/1.2183370.gif?subformat=icon$$xicon$$yOpenAccess
000057787 8564_ $$uhttps://juser.fz-juelich.de/record/57787/files/1.2183370.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000057787 8564_ $$uhttps://juser.fz-juelich.de/record/57787/files/1.2183370.jpg?subformat=icon-700$$xicon-700$$yOpenAccess
000057787 8564_ $$uhttps://juser.fz-juelich.de/record/57787/files/1.2183370.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000057787 909CO $$ooai:juser.fz-juelich.de:57787$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000057787 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000057787 9141_ $$aNachtrag$$y2006
000057787 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000057787 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000057787 9201_ $$0I:(DE-Juel1)VDB42$$d31.12.2006$$gISG$$kISG-2$$lInstitut für Bio- und Chemosensoren$$x1
000057787 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x2$$z381
000057787 970__ $$aVDB:(DE-Juel1)90891
000057787 980__ $$aVDB
000057787 980__ $$aConvertedRecord
000057787 980__ $$ajournal
000057787 980__ $$aI:(DE-Juel1)IBN-2-20090406
000057787 980__ $$aI:(DE-Juel1)VDB381
000057787 980__ $$aUNRESTRICTED
000057787 9801_ $$aFullTexts
000057787 981__ $$aI:(DE-Juel1)IBN-2-20090406
000057787 981__ $$aI:(DE-Juel1)VDB381