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000057804 084__ $$2WoS$$aPhysics, Condensed Matter
000057804 1001_ $$0P:(DE-HGF)0$$aEnkovaara, J.$$b0
000057804 245__ $$aSpin-polarized tunneling between an antiferromagnet and a ferromagnet: First-principles calculations and transport theory
000057804 260__ $$aCollege Park, Md.$$bAPS$$c2007
000057804 300__ $$a054437
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000057804 520__ $$aBy combining first-principles calculations with transport theory we investigate the origin of the magnetoresistance of a magnetic tunnel junction consisting of a ferromagnetic and an antiferromagnetic lead. The (001) oriented Fe/vacuum/Cr planar junction serves as model junction. Even though the conduction electrons of antiferromagnetic Cr are spin-degenerate, it is possible to observe magnetoresistance due to two mechanisms: Firstly, the surface magnetism of Cr creates a spin-dependent potential barrier, and secondly, exchange-split surface states and resonances result in a tunneling conductance which depends on the relative orientation of the Fe and Cr magnetizations. Spin-dependent tunneling between a ferromagnet and an antiferromagnet happens frequently in tunneling setups such as in spin-polarized scanning tunneling microscopy or magnetic tunnel junctions for magnetic random access memory.
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000057804 7001_ $$0P:(DE-Juel1)131042$$aWortmann, D.$$b1$$uFZJ
000057804 7001_ $$0P:(DE-Juel1)130548$$aBlügel, S.$$b2$$uFZJ
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000057804 8567_ $$uhttp://dx.doi.org/10.1103/PhysRevB.76.054437
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