000057918 001__ 57918
000057918 005__ 20180211182008.0
000057918 0247_ $$2DOI$$a10.1002/pssb.200562442
000057918 0247_ $$2WOS$$aWOS:000234925800007
000057918 0247_ $$2ISSN$$a0370-1972
000057918 037__ $$aPreJuSER-57918
000057918 041__ $$aeng
000057918 082__ $$a530
000057918 084__ $$2WoS$$aPhysics, Condensed Matter
000057918 1001_ $$0P:(DE-HGF)0$$aEhresmann, A.$$b0
000057918 245__ $$aFundamentals for magnetic patterning by ion bombardment of exchange bias layer systems
000057918 260__ $$aWeinheim$$bWiley-VCH$$c2006
000057918 300__ $$a29 - 36
000057918 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000057918 3367_ $$2DataCite$$aOutput Types/Journal article
000057918 3367_ $$00$$2EndNote$$aJournal Article
000057918 3367_ $$2BibTeX$$aARTICLE
000057918 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000057918 3367_ $$2DRIVER$$aarticle
000057918 440_0 $$04914$$aPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS$$v243$$x0370-1972$$y1
000057918 500__ $$aRecord converted from VDB: 12.11.2012
000057918 520__ $$aIn the present paper we investigate whether the ion bombardment induced magnetic modifications in exchange biased bilayers are stable in time, whether the direction of the exchange bias can be set to any arbitrary (in-plane) direction by the ion bombardment and whether the exchange bias field can be changed in successive bombardment steps. These three fundamental characteristics are prerequisites for ion bombardment used for an efficient, practical, and stable magnetic patterning of exchange biased layer systems. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
000057918 536__ $$0G:(DE-Juel1)FUEK414$$2G:(DE-HGF)$$aKondensierte Materie$$cP54$$x0
000057918 588__ $$aDataset connected to Web of Science
000057918 650_7 $$2WoSType$$aJ
000057918 7001_ $$0P:(DE-HGF)0$$aEngel, D.$$b1
000057918 7001_ $$0P:(DE-HGF)0$$aWeis, T.$$b2
000057918 7001_ $$0P:(DE-Juel1)VDB42432$$aSchindler, A.$$b3$$uFZJ
000057918 7001_ $$0P:(DE-HGF)0$$aJunk, D.$$b4
000057918 7001_ $$0P:(DE-HGF)0$$aSchmalhorst, J.$$b5
000057918 7001_ $$0P:(DE-HGF)0$$aHöink, V.$$b6
000057918 7001_ $$0P:(DE-HGF)0$$aSacher, M. D.$$b7
000057918 7001_ $$0P:(DE-HGF)0$$aReiss, G.$$b8
000057918 773__ $$0PERI:(DE-600)1481096-7$$a10.1002/pssb.200562442$$gVol. 243, p. 29 - 36$$p29 - 36$$q243<29 - 36$$tPhysica status solidi / B$$v243$$x0370-1972$$y2006
000057918 8567_ $$uhttp://dx.doi.org/10.1002/pssb.200562442
000057918 909CO $$ooai:juser.fz-juelich.de:57918$$pVDB
000057918 9131_ $$0G:(DE-Juel1)FUEK414$$bMaterie$$kP54$$lKondensierte Materie$$vKondensierte Materie$$x0$$zentfällt   bis 2009
000057918 9141_ $$aNachtrag$$y2006
000057918 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000057918 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000057918 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000057918 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000057918 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000057918 9201_ $$0I:(DE-Juel1)VDB38$$d31.12.2006$$gIFF$$kIFF-IEE$$lElektronische Eigenschaften$$x1
000057918 970__ $$aVDB:(DE-Juel1)91064
000057918 980__ $$aVDB
000057918 980__ $$aConvertedRecord
000057918 980__ $$ajournal
000057918 980__ $$aI:(DE-Juel1)PGI-6-20110106
000057918 980__ $$aUNRESTRICTED
000057918 981__ $$aI:(DE-Juel1)PGI-6-20110106