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000057921 0247_ $$2DOI$$a10.1016/j.crysgro.2005.10.032
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000057921 084__ $$2WoS$$aCrystallography
000057921 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000057921 084__ $$2WoS$$aPhysics, Applied
000057921 1001_ $$0P:(DE-HGF)0$$aAmekura, H.$$b0
000057921 245__ $$aFormation processes of zinc-oxide nanoparticles by ion implantation combined with thermal oxidation
000057921 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2006
000057921 300__ $$a2 - 6
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000057921 440_0 $$03235$$aJournal of Crystal Growth$$v287$$x0022-0248$$y1
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000057921 520__ $$aSilica glasses (SiO2) were implanted with Zn+ ions of 60 keV to a fluence of 1.0 x 10(17) ions/cm(2), and were annealed in oxygen gas flow at 700 degrees C for 1 h, to form ZnO nanoparticles (NPs). In as-implanted state, metallic Zn NPs of 10-15 nm in diameter are formed between 10 and 50 nm in depth. NPs are not observed on the surface and down to 10 nm in depth. After the annealing at 700 degrees C for 1 h in oxygen gas, ZnO NPs of similar to 10 nm in diameter are observed around 50 nm in depth. Moreover, droplet-like ZnO NPs larger than 30 nm in diameter grow on the surface of SiO2, substrate. Migration of Zn atoms toward the surface, i.e., shallowing of the depth profile, is observed under the oxygen annealing, while vacuum annealing at the same temperature 700 degrees C does not induce any prominent migration of Zn atoms. Mechanisms of the shallowing and the formation of ZnO NPs are discussed. (c) 2005 Elsevier B.V. All rights reserved.
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000057921 65320 $$2Author$$ananostructures
000057921 65320 $$2Author$$ananomaterials
000057921 65320 $$2Author$$aoxides
000057921 65320 $$2Author$$azinc compounds
000057921 65320 $$2Author$$asemiconducting II-VI materials
000057921 7001_ $$0P:(DE-HGF)0$$aUmeda, N.$$b1
000057921 7001_ $$0P:(DE-HGF)0$$aYoshitake, M.$$b2
000057921 7001_ $$0P:(DE-HGF)0$$aKono, K.$$b3
000057921 7001_ $$0P:(DE-HGF)0$$aKishimoto, N.$$b4
000057921 7001_ $$0P:(DE-Juel1)VDB5399$$aBuchal, C.$$b5$$uFZJ
000057921 773__ $$0PERI:(DE-600)1466514-1$$a10.1016/j.crysgro.2005.10.032$$gVol. 287, p. 2 - 6$$p2 - 6$$q287<2 - 6$$tJournal of crystal growth$$v287$$x0022-0248$$y2006
000057921 8567_ $$uhttp://dx.doi.org/10.1016/j.crysgro.2005.10.032
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000057921 9141_ $$aNachtrag$$y2006
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000057921 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x1
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