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@ARTICLE{Amekura:57921,
      author       = {Amekura, H. and Umeda, N. and Yoshitake, M. and Kono, K.
                      and Kishimoto, N. and Buchal, C.},
      title        = {{F}ormation processes of zinc-oxide nanoparticles by ion
                      implantation combined with thermal oxidation},
      journal      = {Journal of crystal growth},
      volume       = {287},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-57921},
      pages        = {2 - 6},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Silica glasses (SiO2) were implanted with Zn+ ions of 60
                      keV to a fluence of 1.0 x 10(17) ions/cm(2), and were
                      annealed in oxygen gas flow at 700 degrees C for 1 h, to
                      form ZnO nanoparticles (NPs). In as-implanted state,
                      metallic Zn NPs of 10-15 nm in diameter are formed between
                      10 and 50 nm in depth. NPs are not observed on the surface
                      and down to 10 nm in depth. After the annealing at 700
                      degrees C for 1 h in oxygen gas, ZnO NPs of similar to 10 nm
                      in diameter are observed around 50 nm in depth. Moreover,
                      droplet-like ZnO NPs larger than 30 nm in diameter grow on
                      the surface of SiO2, substrate. Migration of Zn atoms toward
                      the surface, i.e., shallowing of the depth profile, is
                      observed under the oxygen annealing, while vacuum annealing
                      at the same temperature 700 degrees C does not induce any
                      prominent migration of Zn atoms. Mechanisms of the
                      shallowing and the formation of ZnO NPs are discussed. (c)
                      2005 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB41},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Crystallography / Materials Science, Multidisciplinary /
                      Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000234982100002},
      doi          = {10.1016/j.crysgro.2005.10.032},
      url          = {https://juser.fz-juelich.de/record/57921},
}