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000057973 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000057973 084__ $$2WoS$$aMaterials Science, Coatings & Films
000057973 084__ $$2WoS$$aPhysics, Applied
000057973 084__ $$2WoS$$aPhysics, Condensed Matter
000057973 1001_ $$0P:(DE-HGF)0$$aQiao, Z.$$b0
000057973 245__ $$aDielectric modeling of transmittance spectra of thin ZnO:Al films
000057973 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2006
000057973 300__ $$a520 - 525
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000057973 440_0 $$05762$$aThin Solid Films$$v496$$x0040-6090$$y2
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000057973 520__ $$aA dielectric model comprising band gap transitions and free electron excitations (Drude model) is successfully applied to simulate transmittance spectra of ZnO films doped with 0.5%, 1% and 2% Al. The Drude formula contains a frequency-dependent damping term in order to get a good fit in the visible spectral region. Useful physical parameters obtained from the fit are electron density and mobility within the grains, film thickness, band gap and refractive index. The optically determined film thickness agrees with that obtained with the stylus method within 2%. The optically determined electronic parameters are compared with those obtained by electrical measurements. Contrary to thin In2O3:Sn films, the Drude mobility inside the grains is similar to the direct current Hall mobility indicating more perfect film growth without forming pronounced grain boundaries. Maximum value is 35 cm(2)/V s. The effective electron mass is estimated to be about 0.6 of the free electron mass. The refractive index at 550 run decreases with increasing electron density. (c) 2005 Elsevier B.V. All rights reserved.
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000057973 65320 $$2Author$$azinc oxide (563)
000057973 65320 $$2Author$$aelectrical properties (112)
000057973 65320 $$2Author$$aoptical properties (345)
000057973 7001_ $$0P:(DE-Juel1)VDB13388$$aAgashe, C.$$b1$$uFZJ
000057973 7001_ $$0P:(DE-HGF)0$$aMergel, D.$$b2
000057973 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2005.08.282$$gVol. 496, p. 520 - 525$$p520 - 525$$q496<520 - 525$$tThin solid films$$v496$$x0040-6090$$y2006
000057973 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2005.08.282
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000057973 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x1
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