Hauptseite > Publikationsdatenbank > Enhanced stability of platinized silicon substrates using an unconventional adhesion layer deposited by CSD for high temperature dielectric thin film deposition > print

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005     20180211185857.0
024 7 _ |2 DOI
|a 10.1007/s00339-007-3866-3
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024 7 _ |2 ISSN
|a 0947-8396
037 _ _ |a PreJuSER-58028
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Halder, S.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Enhanced stability of platinized silicon substrates using an unconventional adhesion layer deposited by CSD for high temperature dielectric thin film deposition
260 _ _ |c 2007
|a Berlin
|b Springer
300 _ _ |a 705 - 708
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics A
|x 0947-8396
|0 560
|v 87
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Almost all platinized substrates manufactured presently use an TiO2 adhesion layer to improve the adhesion between the SiO2 and the Pt. These substrates however are stable till only 800 degrees C. We show that simply by replacing the TiO2 with Al2O3, the stability of the electrodes can be increased to 1000 degrees C and more. These substrates can be used for high temperature depositions which standard platinized substrates cannot withstand. Further we show that dielectric thin films of BaTiO3 and (Ba,Sr)TiO3 crystallized at higher temperatures show almost a threefold increase in permittivity on these high temperature stable platinized silicon substrates.The large increase in permittivity is attributed to an increase in grain size at high temperatures.
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700 1 _ |a Schneller, T.
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700 1 _ |a Waser, R.
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856 7 _ |u http://dx.doi.org/10.1007/s00339-007-3866-3
909 C O |o oai:juser.fz-juelich.de:58028
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