TY  - JOUR
AU  - Mustafa, Y.
AU  - Rickes, J. T.
AU  - Waser, R.
AU  - McAdams, H.P.
TI  - A dynamic reference scheme for nonvolatile ferroelectric RAM
JO  - Integrated ferroelectrics
VL  - 72
SN  - 1058-4587
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - PreJuSER-58039
SP  - 31 - 37
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - We report on a novel reference voltage scheme for FRAMs which solves most problems like fatigue, temperature dependency, voltage drop, etc still present in other reference schemes: dynamic reference scheme. It tracks the variations of the ferroelectric capacitors in the memory and provides a common reference voltage line for all sense amplifiers on chip or different reference voltages for different memory banks. No dedicated reference cells are required, instead the memory cells themselves are utilized to generate the reference voltage by periodical test of their voltage levels or by setting a signal that starts the test. This scheme extends life-time and reliability of the memory and enables a self test and repair capability.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000233872900005
DO  - DOI:10.1080/10584580500312644
UR  - https://juser.fz-juelich.de/record/58039
ER  -