% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Mustafa:58039,
author = {Mustafa, Y. and Rickes, J. T. and Waser, R. and McAdams,
H.P.},
title = {{A} dynamic reference scheme for nonvolatile ferroelectric
{RAM}},
journal = {Integrated ferroelectrics},
volume = {72},
issn = {1058-4587},
address = {London [u.a.]},
publisher = {Taylor $\&$ Francis},
reportid = {PreJuSER-58039},
pages = {31 - 37},
year = {2005},
note = {Record converted from VDB: 12.11.2012},
abstract = {We report on a novel reference voltage scheme for FRAMs
which solves most problems like fatigue, temperature
dependency, voltage drop, etc still present in other
reference schemes: dynamic reference scheme. It tracks the
variations of the ferroelectric capacitors in the memory and
provides a common reference voltage line for all sense
amplifiers on chip or different reference voltages for
different memory banks. No dedicated reference cells are
required, instead the memory cells themselves are utilized
to generate the reference voltage by periodical test of
their voltage levels or by setting a signal that starts the
test. This scheme extends life-time and reliability of the
memory and enables a self test and repair capability.},
keywords = {J (WoSType)},
cin = {IFF-IEM / CNI},
ddc = {620},
cid = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Engineering, Electrical $\&$ Electronic / Physics, Applied
/ Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000233872900005},
doi = {10.1080/10584580500312644},
url = {https://juser.fz-juelich.de/record/58039},
}