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| Hauptseite > Publikationsdatenbank > A dynamic reference scheme for nonvolatile ferroelectric RAM > print |
| Hauptseite > Publikationsdatenbank > A dynamic reference scheme for nonvolatile ferroelectric RAM > print |
| 001 | 58039 | ||
| 005 | 20180211175741.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1080/10584580500312644 |
| 024 | 7 | _ | |2 WOS |a WOS:000233872900005 |
| 037 | _ | _ | |a PreJuSER-58039 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Mustafa, Y. |b 0 |u FZJ |0 P:(DE-Juel1)VDB70200 |
| 245 | _ | _ | |a A dynamic reference scheme for nonvolatile ferroelectric RAM |
| 260 | _ | _ | |a London [u.a.] |b Taylor & Francis |c 2005 |
| 300 | _ | _ | |a 31 - 37 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Integrated Ferroelectrics |x 1058-4587 |0 2659 |v 72 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a We report on a novel reference voltage scheme for FRAMs which solves most problems like fatigue, temperature dependency, voltage drop, etc still present in other reference schemes: dynamic reference scheme. It tracks the variations of the ferroelectric capacitors in the memory and provides a common reference voltage line for all sense amplifiers on chip or different reference voltages for different memory banks. No dedicated reference cells are required, instead the memory cells themselves are utilized to generate the reference voltage by periodical test of their voltage levels or by setting a signal that starts the test. This scheme extends life-time and reliability of the memory and enables a self test and repair capability. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a dynamic reference voltage |
| 653 | 2 | 0 | |2 Author |a non destructive |
| 653 | 2 | 0 | |2 Author |a FRAM |
| 653 | 2 | 0 | |2 Author |a calibration |
| 700 | 1 | _ | |a Rickes, J. T. |b 1 |u FZJ |0 P:(DE-Juel1)VDB3114 |
| 700 | 1 | _ | |a Waser, R. |b 2 |u FZJ |0 P:(DE-Juel1)131022 |
| 700 | 1 | _ | |a McAdams, H.P. |b 3 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1080/10584580500312644 |g Vol. 72, p. 31 - 37 |p 31 - 37 |q 72<31 - 37 |0 PERI:(DE-600)2037916-X |t Integrated ferroelectrics |v 72 |y 2005 |x 1058-4587 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1080/10584580500312644 |
| 909 | C | O | |o oai:juser.fz-juelich.de:58039 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2005 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IFF-IEM |l Elektronische Materialien |d 31.12.2006 |g IFF |0 I:(DE-Juel1)VDB321 |x 0 |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)91216 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB381 |
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