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024 7 _ |a 10.1063/1.2146055
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024 7 _ |a 2128/17153
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037 _ _ |a PreJuSER-58040
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Gerber, P.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Effects of reversible and irreversible ferroelectric switching on the piezoelectric large-signal response of PZT thin films
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2005
300 _ _ |a 124101
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
|0 3051
|v 98
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The effects of reversible and irreversible switching processes on the electromechanical large-signal strain S of tetragonal Pb(Zr-x,Ti1-x)O-3 thin films are investigated and discussed. Starting from electric small- and large-signal measurements, the percentage of switched unit cells ce(sw) is calculated. The result is then used in combination with the measured electromechanical field-induced small-signal response to calculate the field-induced large-signal strain S. Enhanced models for this calculation are developed improving a known model. Differences between the calculated and measured large-signal strains are discussed in respect to parameter influences and irreversible contributions. In addition, detailed insight on the switching processes in respect to the electromechanical properties is given. (c) 2005 American Institute of Physics.
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700 1 _ |a Kuegeler, C.
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700 1 _ |a Böttger, U.
|b 2
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.2146055
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920 1 _ |k IFF-IEM
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|d 31.12.2006
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