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000058046 084__ $$2WoS$$aPhysics, Applied
000058046 1001_ $$0P:(DE-HGF)0$$aSchorn, P. J.$$b0
000058046 245__ $$aFatigue effect in ferroelectric PbZr1-xTixO3 thin films
000058046 260__ $$aBristol$$bIOP Publ.$$c2006
000058046 300__ $$a114104-1 - 114104-5
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000058046 440_0 $$03700$$aJournal of Physics D - Applied Physics$$v99$$x0022-3727$$y11
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000058046 520__ $$aPbZr1-xTixO3 (PZT) is one preferred ferroelectric material being used in nonvolatile ferroelectric random access memory devices. The use of oxide electrodes like IrO2 or SrRuO3 (SRO) is necessary to suppress the serious loss of polarization due to bipolar voltage cycling. Although, there are a number of models under discussion, the origin of the fatigue phenomenon is still not completely understood. In this paper, the fatigue effect of ferroelectric Pb(Zr-0.40,Ti-0.60)O-3 thin films has been studied in detail. To achieve a deeper understanding of the effect, several PZT samples with different electrode materials were investigated. After determining the dependence of the single fatigue parameters, a simulation approach was made to analyze the fatigue effect qualitatively. A sample with SRO electrodes was measured up to 10(13) cycles and no fatigue of the switchable polarization was observed. (c) 2006 American Institute of Physics.
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000058046 7001_ $$0P:(DE-HGF)0$$aBräuhaus, D.$$b1
000058046 7001_ $$0P:(DE-HGF)0$$aBöttger, U.$$b2
000058046 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000058046 773__ $$0PERI:(DE-600)1472948-9$$a10.1063/1.2200470$$gVol. 99, p. 114104-1 - 114104-5$$p114104-1 - 114104-5$$q99<114104-1 - 114104-5$$tJournal of physics / D$$v99$$x0022-3727$$y2006
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