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@ARTICLE{Schorn:58046,
      author       = {Schorn, P. J. and Bräuhaus, D. and Böttger, U. and Waser,
                      R.},
      title        = {{F}atigue effect in ferroelectric {P}b{Z}r1-x{T}ix{O}3 thin
                      films},
      journal      = {Journal of physics / D},
      volume       = {99},
      issn         = {0022-3727},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {PreJuSER-58046},
      pages        = {114104-1 - 114104-5},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {PbZr1-xTixO3 (PZT) is one preferred ferroelectric material
                      being used in nonvolatile ferroelectric random access memory
                      devices. The use of oxide electrodes like IrO2 or SrRuO3
                      (SRO) is necessary to suppress the serious loss of
                      polarization due to bipolar voltage cycling. Although, there
                      are a number of models under discussion, the origin of the
                      fatigue phenomenon is still not completely understood. In
                      this paper, the fatigue effect of ferroelectric
                      Pb(Zr-0.40,Ti-0.60)O-3 thin films has been studied in
                      detail. To achieve a deeper understanding of the effect,
                      several PZT samples with different electrode materials were
                      investigated. After determining the dependence of the single
                      fatigue parameters, a simulation approach was made to
                      analyze the fatigue effect qualitatively. A sample with SRO
                      electrodes was measured up to 10(13) cycles and no fatigue
                      of the switchable polarization was observed. (c) 2006
                      American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / CNI / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000238314900073},
      doi          = {10.1063/1.2200470},
      url          = {https://juser.fz-juelich.de/record/58046},
}