Home > Publications database > On the existance of two different resistive switching mechanisms in metal organic charge transfer complex thin films > print |
001 | 58047 | ||
005 | 20180211163445.0 | ||
024 | 7 | _ | |a 10.1109/NVMT.2006.378889 |2 DOI |
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100 | 1 | _ | |a Kever, T. |b 0 |0 P:(DE-HGF)0 |
245 | _ | _ | |a On the existance of two different resistive switching mechanisms in metal organic charge transfer complex thin films |
260 | _ | _ | |c 2006 |
295 | 1 | 0 | |a 7th Annual Non-Volatile Memory Technology Symposium, 2006 (NVMTS 2006) : procedings. - IEEE, 2006. - S. 116 - 119 |
336 | 7 | _ | |a Contribution to a conference proceedings |0 PUB:(DE-HGF)8 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a Contribution to a book |0 PUB:(DE-HGF)7 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
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336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
500 | _ | _ | |3 Conference proceedings / Book |
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700 | 1 | _ | |a Klopstra, B. |b 1 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Böttger, U. |b 2 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Waser, R. |b 3 |u FZJ |0 P:(DE-Juel1)131022 |
856 | 7 | _ | |u http://dx.doi.org/10.1109/NVMT.2006.378889 |
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