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005     20180211163445.0
024 7 _ |a 10.1109/NVMT.2006.378889
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037 _ _ |a PreJuSER-58047
100 1 _ |a Kever, T.
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245 _ _ |a On the existance of two different resistive switching mechanisms in metal organic charge transfer complex thin films
260 _ _ |c 2006
295 1 0 |a 7th Annual Non-Volatile Memory Technology Symposium, 2006 (NVMTS 2006) : procedings. - IEEE, 2006. - S. 116 - 119
336 7 _ |a Contribution to a conference proceedings
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500 _ _ |a Record converted from VDB: 12.11.2012
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700 1 _ |a Klopstra, B.
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700 1 _ |a Böttger, U.
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700 1 _ |a Waser, R.
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856 7 _ |u http://dx.doi.org/10.1109/NVMT.2006.378889
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914 1 _ |y 2006
920 1 _ |d 14.09.2008
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LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21