TY  - JOUR
AU  - Kever, T.
AU  - Böttger, U.
AU  - Schindler, C.
AU  - Waser, R.
TI  - On the origin of bistable resistive switching in metal organic charge transfer complex memory cells
JO  - Applied physics letters
VL  - 91
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-58103
SP  - 083506
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - Electrical characteristics of Cu:tetracyanoquinodimethane (TCNQ) devices with different electrodes were studied. The comparison of impedance spectroscopic measurements on devices with Al and Pt top electrodes proved the existence of a high resistive interface layer between Cu:TCNQ and Al. An equivalent circuit was modeled and the resulting values suggest that the interface layer is composed of naturally formed aluminum oxide. Devices with deliberately formed aluminum oxide and without Cu:TCNQ were fabricated and revealed a similar behavior. The authors propose that the switching effect in Cu:TCNQ thin film devices is a Cu ion based electrochemical effect occurring in a thin aluminum oxide layer. (C) 2007 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000248984800096
DO  - DOI:10.1063/1.2772191
UR  - https://juser.fz-juelich.de/record/58103
ER  -