Hauptseite > Publikationsdatenbank > On the origin of bistable resistive switching in metal organic charge transfer complex memory cells > print

001     58103
005     20200423204515.0
024 7 _ |a 10.1063/1.2772191
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024 7 _ |a 2128/17994
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037 _ _ |a PreJuSER-58103
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Kever, T.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a On the origin of bistable resistive switching in metal organic charge transfer complex memory cells
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2007
300 _ _ |a 083506
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 91
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Electrical characteristics of Cu:tetracyanoquinodimethane (TCNQ) devices with different electrodes were studied. The comparison of impedance spectroscopic measurements on devices with Al and Pt top electrodes proved the existence of a high resistive interface layer between Cu:TCNQ and Al. An equivalent circuit was modeled and the resulting values suggest that the interface layer is composed of naturally formed aluminum oxide. Devices with deliberately formed aluminum oxide and without Cu:TCNQ were fabricated and revealed a similar behavior. The authors propose that the switching effect in Cu:TCNQ thin film devices is a Cu ion based electrochemical effect occurring in a thin aluminum oxide layer. (C) 2007 American Institute of Physics.
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700 1 _ |a Böttger, U.
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700 1 _ |a Schindler, C.
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.2772191
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